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|
MOSFETs N-Ch 650V 0.135 Ohm typ. 15A MDmeshM5
- STL31N65M5
- STMicroelectronics
-
1:
Rp90.079
-
2.921In Stock
|
Mouser Part No
511-STL31N65M5
|
STMicroelectronics
|
MOSFETs N-Ch 650V 0.135 Ohm typ. 15A MDmeshM5
|
|
2.921In Stock
|
|
|
Rp90.079
|
|
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Rp59.808
|
|
|
Rp44.948
|
|
|
Rp42.196
|
|
|
Rp37.426
|
|
|
Rp37.426
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
SMD/SMT
|
PowerFLAT-8x8-5
|
N-Channel
|
|
|
|
IGBT Modules ACEPACK 2 converter inverter brake, 1200 V, 25 A trench gate field-stop IGBT M s
- A2C25S12M3
- STMicroelectronics
-
1:
Rp1.075.443
-
33In Stock
|
Mouser Part No
511-A2C25S12M3
|
STMicroelectronics
|
IGBT Modules ACEPACK 2 converter inverter brake, 1200 V, 25 A trench gate field-stop IGBT M s
|
|
33In Stock
|
|
|
Rp1.075.443
|
|
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Rp1.005.361
|
|
Min.: 1
Mult.: 1
|
|
IGBT Modules
|
Si
|
Through Hole
|
ACEPACK2
|
|
|
|
|
MOSFETs N-channel 600 V 0.190 ohm 16A Mdmesh
- STB22NM60N
- STMicroelectronics
-
1:
Rp87.510
-
1.030In Stock
-
Verify Status with Factory
|
Mouser Part No
511-STB22NM60N
Verify Status with Factory
|
STMicroelectronics
|
MOSFETs N-channel 600 V 0.190 ohm 16A Mdmesh
|
|
1.030In Stock
|
|
|
Rp87.510
|
|
|
Rp70.449
|
|
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Rp63.294
|
|
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Rp59.258
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
|
|
|
MOSFETs N-Ch 650 Volt 5 Amp
- STB8NM60T4
- STMicroelectronics
-
1:
Rp77.971
-
919In Stock
|
Mouser Part No
511-STB8NM60
|
STMicroelectronics
|
MOSFETs N-Ch 650 Volt 5 Amp
|
|
919In Stock
|
|
|
Rp77.971
|
|
|
Rp37.059
|
|
|
Rp30.638
|
|
|
Rp30.454
|
|
|
Rp30.454
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
|
|
|
MOSFETs N-channel 650 V, 0.32 Ohm typ., 11 A MDmesh M2 Power MOSFET in TO-220FP package
- STF16N65M2
- STMicroelectronics
-
1:
Rp47.700
-
926In Stock
|
Mouser Part No
511-STF16N65M2
|
STMicroelectronics
|
MOSFETs N-channel 650 V, 0.32 Ohm typ., 11 A MDmesh M2 Power MOSFET in TO-220FP package
|
|
926In Stock
|
|
|
Rp47.700
|
|
|
Rp22.749
|
|
|
Rp18.896
|
|
|
Rp16.328
|
|
|
Rp15.943
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
|
|
|
Darlington Transistors Eight NPN Array
- ULN2803A
- STMicroelectronics
-
1:
Rp31.922
-
36.695In Stock
|
Mouser Part No
511-ULN2803A
|
STMicroelectronics
|
Darlington Transistors Eight NPN Array
|
|
36.695In Stock
|
|
|
Rp31.922
|
|
|
Rp20.364
|
|
|
Rp19.080
|
|
|
Rp18.896
|
|
Min.: 1
Mult.: 1
|
|
Darlington Transistors
|
|
Through Hole
|
PDIP-18
|
NPN
|
|
|
|
MOSFET Modules ACEPACK 2 power module, fourpack topology, 650 V, 23 mOhm SiC Power MOSFET NTC
- A2F20M65W3-FC
- STMicroelectronics
-
1:
Rp1.405.304
-
18In Stock
-
New Product
|
Mouser Part No
511-A2F20M65W3-FC
New Product
|
STMicroelectronics
|
MOSFET Modules ACEPACK 2 power module, fourpack topology, 650 V, 23 mOhm SiC Power MOSFET NTC
|
|
18In Stock
|
|
|
Rp1.405.304
|
|
|
Rp1.258.169
|
|
Min.: 1
Mult.: 1
|
|
MOSFET Modules
|
|
Press Fit
|
ACEPACK
|
|
|
|
|
SiC MOSFETs Silicon carbide Power MOSFET 650 V, 40 mOhm typ., 35 A in a TO-LL package
- SCT040TO65G3
- STMicroelectronics
-
1:
Rp175.388
-
37In Stock
-
New Product
|
Mouser Part No
511-SCT040TO65G3
New Product
|
STMicroelectronics
|
SiC MOSFETs Silicon carbide Power MOSFET 650 V, 40 mOhm typ., 35 A in a TO-LL package
|
|
37In Stock
|
|
|
Rp175.388
|
|
|
Rp132.458
|
|
|
Rp98.335
|
|
|
Rp91.730
|
|
|
Rp91.730
|
|
Min.: 1
Mult.: 1
|
|
SiC MOSFETS
|
SiC
|
SMD/SMT
|
TOLL-8
|
N-Channel
|
|
|
|
MOSFETs N-channel 800 V, 1.0 Ohm typ., 5 A MDmesh K6 Power MOSFET
- STF80N1K1K6
- STMicroelectronics
-
1:
Rp44.214
-
1.003In Stock
-
New Product
|
Mouser Part No
511-STF80N1K1K6
New Product
|
STMicroelectronics
|
MOSFETs N-channel 800 V, 1.0 Ohm typ., 5 A MDmesh K6 Power MOSFET
|
|
1.003In Stock
|
|
|
Rp44.214
|
|
|
Rp21.648
|
|
|
Rp19.263
|
|
|
Rp15.484
|
|
|
Rp14.200
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
Through Hole
|
TO-220FP-3
|
N-Channel
|
|
|
|
MOSFETs N-channel 800 V, 515 mOhm typ., 7 A MDmesh K6 Power MOSFET
- STF80N600K6
- STMicroelectronics
-
1:
Rp58.891
-
1.047In Stock
-
New Product
|
Mouser Part No
511-STF80N600K6
New Product
|
STMicroelectronics
|
MOSFETs N-channel 800 V, 515 mOhm typ., 7 A MDmesh K6 Power MOSFET
|
|
1.047In Stock
|
|
|
Rp58.891
|
|
|
Rp29.537
|
|
|
Rp28.987
|
|
|
Rp24.217
|
|
|
Rp21.281
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
Through Hole
|
TO-220FP-3
|
N-Channel
|
|
|
|
IGBTs Automotive-grade trench gate field-stop 650 V, 30 A low-loss M series IGBT
- STGHU30M65DF2AG
- STMicroelectronics
-
1:
Rp81.273
-
540In Stock
-
600Expected 20/04/2026
-
New Product
|
Mouser Part No
511-STGHU30M65DF2AG
New Product
|
STMicroelectronics
|
IGBTs Automotive-grade trench gate field-stop 650 V, 30 A low-loss M series IGBT
|
|
540In Stock
600Expected 20/04/2026
|
|
|
Rp81.273
|
|
|
Rp53.937
|
|
|
Rp38.160
|
|
|
Rp36.875
|
|
|
Rp32.839
|
|
Min.: 1
Mult.: 1
|
|
IGBTs
|
Si
|
SMD/SMT
|
HU3PAK-7
|
|
|
|
|
IGBTs Automotive-grade trench gate field-stop 650 V, 30 A low-loss M series IGBT
- STGWA30M65DF2AG
- STMicroelectronics
-
1:
Rp76.870
-
766In Stock
-
New Product
|
Mouser Part No
511-STGWA30M65DF2AG
New Product
|
STMicroelectronics
|
IGBTs Automotive-grade trench gate field-stop 650 V, 30 A low-loss M series IGBT
|
|
766In Stock
|
|
|
Rp76.870
|
|
|
Rp51.736
|
|
|
Rp38.343
|
|
|
Rp34.124
|
|
|
Rp30.271
|
|
Min.: 1
Mult.: 1
|
|
IGBTs
|
Si
|
Through Hole
|
TO-247-3
|
|
|
|
|
IGBTs Automotive-grade trench gate field-stop 650 V, 50 A low-loss M series IGBT
- STGWA50M65DF2AG
- STMicroelectronics
-
1:
Rp107.508
-
54In Stock
-
New Product
|
Mouser Part No
511-STGWA50M65DF2AG
New Product
|
STMicroelectronics
|
IGBTs Automotive-grade trench gate field-stop 650 V, 50 A low-loss M series IGBT
|
|
54In Stock
|
|
|
Rp107.508
|
|
|
Rp74.852
|
|
|
Rp54.121
|
|
|
Rp50.085
|
|
Min.: 1
Mult.: 1
|
|
IGBT Transistors
|
|
|
|
|
|
|
|
Bipolar Transistors - BJT Rad-Hard 50 V, 0.8 A NPN transistor - Engineering model
- 2N2222AUB1
- STMicroelectronics
-
1:
Rp1.698.473
-
145In Stock
|
Mouser Part No
511-2N2222AUB1
|
STMicroelectronics
|
Bipolar Transistors - BJT Rad-Hard 50 V, 0.8 A NPN transistor - Engineering model
|
|
145In Stock
|
|
|
Rp1.698.473
|
|
|
Rp1.595.185
|
|
|
Rp1.382.738
|
|
Min.: 1
Mult.: 1
|
|
BJTs - Bipolar Transistors
|
Si
|
SMD/SMT
|
UB-4
|
NPN
|
|
|
|
IGBTs Automotive-grade trench gate field-stop 1200 V 40 A low-loss MS series IGBT in a
- GWA40MS120DF4AG
- STMicroelectronics
-
1:
Rp120.717
-
568In Stock
|
Mouser Part No
511-GWA40MS120DF4AG
|
STMicroelectronics
|
IGBTs Automotive-grade trench gate field-stop 1200 V 40 A low-loss MS series IGBT in a
|
|
568In Stock
|
|
|
Rp120.717
|
|
|
Rp83.658
|
|
|
Rp60.542
|
|
|
Rp60.175
|
|
|
Rp57.606
|
|
Min.: 1
Mult.: 1
|
|
IGBT Transistors
|
Si
|
Through Hole
|
TO-247-3
|
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an H2PAK-7 package
- SCT012H90G3AG
- STMicroelectronics
-
1:
Rp377.010
-
157In Stock
-
1.000On Order
|
Mouser Part No
511-SCT012H90G3AG
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an H2PAK-7 package
|
|
157In Stock
1.000On Order
|
|
|
Rp377.010
|
|
|
Rp270.787
|
|
|
Rp263.082
|
|
|
Rp245.653
|
|
Min.: 1
Mult.: 1
|
|
SiC MOSFETS
|
SiC
|
SMD/SMT
|
H2PAK-7
|
N-Channel
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an H2PAK-7 package
- SCT018H65G3AG
- STMicroelectronics
-
1:
Rp283.996
-
197In Stock
|
Mouser Part No
511-SCT018H65G3AG
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an H2PAK-7 package
|
|
197In Stock
|
|
|
Rp283.996
|
|
|
Rp200.522
|
|
|
Rp193.000
|
|
|
Rp182.726
|
|
|
Rp170.618
|
|
Min.: 1
Mult.: 1
|
|
SiC MOSFETS
|
SiC
|
SMD/SMT
|
H2PAK-7
|
N-Channel
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an HiP247-4 package
- SCT018W65G3-4AG
- STMicroelectronics
-
1:
Rp286.565
-
532In Stock
|
Mouser Part No
511-SCT018W65G3-4AG
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an HiP247-4 package
|
|
532In Stock
|
|
|
Rp286.565
|
|
|
Rp225.656
|
|
|
Rp185.662
|
|
|
Rp181.075
|
|
|
Rp172.452
|
|
Min.: 1
Mult.: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
HiP-247-4
|
N-Channel
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A
- SCT027W65G3-4AG
- STMicroelectronics
-
1:
Rp236.847
-
338In Stock
|
Mouser Part No
511-SCT027W65G3-4AG
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A
|
|
338In Stock
|
|
|
Rp236.847
|
|
|
Rp177.039
|
|
|
Rp153.006
|
|
|
Rp135.393
|
|
Min.: 1
Mult.: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
HiP-247-4
|
N-Channel
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A
- SCT040W120G3-4AG
- STMicroelectronics
-
1:
Rp241.250
-
693In Stock
|
Mouser Part No
511-SCT040W120G3-4AG
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A
|
|
693In Stock
|
|
|
Rp241.250
|
|
|
Rp168.600
|
|
|
Rp137.962
|
|
Min.: 1
Mult.: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
HiP-247-4
|
N-Channel
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247 package
- SCT040W120G3AG
- STMicroelectronics
-
1:
Rp239.415
-
602In Stock
|
Mouser Part No
511-SCT040W120G3AG
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247 package
|
|
602In Stock
|
|
|
Rp239.415
|
|
|
Rp167.316
|
|
|
Rp136.678
|
|
Min.: 1
Mult.: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
HiP-247-3
|
N-Channel
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HiP247-4 package
- SCT070W120G3-4AG
- STMicroelectronics
-
1:
Rp230.609
-
368In Stock
-
1.200Expected 08/02/2027
|
Mouser Part No
511-SCT070W120G3-4AG
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HiP247-4 package
|
|
368In Stock
1.200Expected 08/02/2027
|
|
|
Rp230.609
|
|
|
Rp171.535
|
|
|
Rp146.585
|
|
|
Rp131.174
|
|
Min.: 1
Mult.: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
HiP-247-4
|
N-Channel
|
|
|
|
MOSFETs Automotive-grade N-channel 650V, 56 mOhm typ., 53 A MDmesh DM6 Power MOSFET
- SH63N65DM6AG
- STMicroelectronics
-
1:
Rp421.775
-
194In Stock
|
Mouser Part No
511-SH63N65DM6AG
|
STMicroelectronics
|
MOSFETs Automotive-grade N-channel 650V, 56 mOhm typ., 53 A MDmesh DM6 Power MOSFET
|
|
194In Stock
|
|
|
Rp421.775
|
|
|
Rp329.678
|
|
|
Rp231.160
|
|
|
Rp231.160
|
|
|
Rp220.152
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
SMD/SMT
|
ACEPACK SMIT-9
|
N-Channel
|
|
|
|
MOSFETs Automotive grade N-channel 650V 35 mOhm 64A MDmesh DM6 half-bridge Power MOSFET
- SH68N65DM6AG
- STMicroelectronics
-
1:
Rp349.675
-
192In Stock
|
Mouser Part No
511-SH68N65DM6AG
|
STMicroelectronics
|
MOSFETs Automotive grade N-channel 650V 35 mOhm 64A MDmesh DM6 half-bridge Power MOSFET
|
|
192In Stock
|
|
|
Rp349.675
|
|
|
Rp249.873
|
|
|
Rp222.904
|
|
|
Rp222.904
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
|
|
N-Channel
|
|
|
|
IGBT Modules SLLIMM high power IPM, 3-phase inverter, 10 A, 1200 V short-circuit rugged IGBT
- STGIK10M120T
- STMicroelectronics
-
1:
Rp786.860
-
69In Stock
|
Mouser Part No
511-STGIK10M120T
|
STMicroelectronics
|
IGBT Modules SLLIMM high power IPM, 3-phase inverter, 10 A, 1200 V short-circuit rugged IGBT
|
|
69In Stock
|
|
Min.: 1
Mult.: 1
|
|
IGBT Modules
|
Si
|
Through Hole
|
SDIPHP-30
|
|
|
Indonesia
