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|
Bipolar Transistors - BJT Rad-Hard 50 V, 0.8 A NPN transistor - Engineering model
- 2N2222AUB1
- STMicroelectronics
-
1:
Rp1.698.473
-
145In Stock
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Mouser Part No
511-2N2222AUB1
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STMicroelectronics
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Bipolar Transistors - BJT Rad-Hard 50 V, 0.8 A NPN transistor - Engineering model
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145In Stock
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Rp1.698.473
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Rp1.595.185
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Rp1.382.738
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Min.: 1
Mult.: 1
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BJTs - Bipolar Transistors
|
Si
|
SMD/SMT
|
UB-4
|
NPN
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Bipolar Transistors - BJT Rad-Hard 60 V, 0.6 A PNP transistor - Engineering model
- 2N2907AUB1
- STMicroelectronics
-
1:
Rp2.048.147
-
21In Stock
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Mouser Part No
511-2N2907AUB1
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STMicroelectronics
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Bipolar Transistors - BJT Rad-Hard 60 V, 0.6 A PNP transistor - Engineering model
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21In Stock
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Rp2.048.147
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Rp1.729.477
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Min.: 1
Mult.: 1
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BJTs - Bipolar Transistors
|
Si
|
SMD/SMT
|
UB-4
|
PNP
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IGBTs Automotive-grade trench gate field-stop 1200 V 40 A low-loss MS series IGBT in a
- GWA40MS120DF4AG
- STMicroelectronics
-
1:
Rp120.900
-
568In Stock
|
Mouser Part No
511-GWA40MS120DF4AG
|
STMicroelectronics
|
IGBTs Automotive-grade trench gate field-stop 1200 V 40 A low-loss MS series IGBT in a
|
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568In Stock
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Rp120.900
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Rp60.725
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Rp60.542
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Rp52.103
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View
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Rp50.268
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Quote
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Min.: 1
Mult.: 1
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IGBT Transistors
|
Si
|
Through Hole
|
TO-247-3
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SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an H2PAK-7 package
- SCT012H90G3AG
- STMicroelectronics
-
1:
Rp377.010
-
160In Stock
|
Mouser Part No
511-SCT012H90G3AG
|
STMicroelectronics
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SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an H2PAK-7 package
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160In Stock
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Rp377.010
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Rp270.787
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Rp263.082
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Rp214.832
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Min.: 1
Mult.: 1
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SiC MOSFETS
|
SiC
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SMD/SMT
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H2PAK-7
|
N-Channel
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SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an H2PAK-7 package
- SCT018H65G3AG
- STMicroelectronics
-
1:
Rp283.996
-
202In Stock
|
Mouser Part No
511-SCT018H65G3AG
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an H2PAK-7 package
|
|
202In Stock
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Rp283.996
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Rp200.522
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Rp182.726
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Rp149.153
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Min.: 1
Mult.: 1
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SiC MOSFETS
|
SiC
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SMD/SMT
|
H2PAK-7
|
N-Channel
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SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an HiP247-4 package
- SCT018W65G3-4AG
- STMicroelectronics
-
1:
Rp291.518
-
532In Stock
|
Mouser Part No
511-SCT018W65G3-4AG
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an HiP247-4 package
|
|
532In Stock
|
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Rp291.518
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Rp225.656
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Rp218.317
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Rp212.630
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View
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Quote
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Min.: 1
Mult.: 1
|
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SiC MOSFETS
|
SiC
|
Through Hole
|
HiP-247-4
|
N-Channel
|
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SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A
- SCT027W65G3-4AG
- STMicroelectronics
-
1:
Rp236.847
-
338In Stock
|
Mouser Part No
511-SCT027W65G3-4AG
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A
|
|
338In Stock
|
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Rp236.847
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Rp177.039
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Rp153.006
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Rp118.332
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Min.: 1
Mult.: 1
|
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SiC MOSFETS
|
SiC
|
Through Hole
|
HiP-247-4
|
N-Channel
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A
- SCT040W120G3-4AG
- STMicroelectronics
-
1:
Rp238.681
-
693In Stock
|
Mouser Part No
511-SCT040W120G3-4AG
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A
|
|
693In Stock
|
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Rp238.681
|
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Rp168.600
|
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Rp127.688
|
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Rp120.533
|
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Min.: 1
Mult.: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
HiP-247-4
|
N-Channel
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247 package
- SCT040W120G3AG
- STMicroelectronics
-
1:
Rp239.232
-
602In Stock
|
Mouser Part No
511-SCT040W120G3AG
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247 package
|
|
602In Stock
|
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Rp239.232
|
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Rp167.316
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Rp126.587
|
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Rp119.616
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Rp119.432
|
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Min.: 1
Mult.: 1
|
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SiC MOSFETS
|
SiC
|
Through Hole
|
HiP-247-3
|
N-Channel
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HiP247-4 package
- SCT070W120G3-4AG
- STMicroelectronics
-
1:
Rp230.609
-
468In Stock
-
1.200Expected 20/04/2026
|
Mouser Part No
511-SCT070W120G3-4AG
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HiP247-4 package
|
|
468In Stock
1.200Expected 20/04/2026
|
|
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Rp230.609
|
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Rp161.812
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Rp146.585
|
|
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Rp138.145
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Rp114.663
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|
Min.: 1
Mult.: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
HiP-247-4
|
N-Channel
|
|
|
|
MOSFETs Automotive-grade N-channel 650V, 56 mOhm typ., 53 A MDmesh DM6 Power MOSFET
- SH63N65DM6AG
- STMicroelectronics
-
1:
Rp402.878
-
194In Stock
|
Mouser Part No
511-SH63N65DM6AG
|
STMicroelectronics
|
MOSFETs Automotive-grade N-channel 650V, 56 mOhm typ., 53 A MDmesh DM6 Power MOSFET
|
|
194In Stock
|
|
|
Rp402.878
|
|
|
Rp319.037
|
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Rp231.160
|
|
|
Rp231.160
|
|
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Rp192.633
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
SMD/SMT
|
ACEPACK SMIT-9
|
N-Channel
|
|
|
|
MOSFETs Automotive grade N-channel 650V 35 mOhm 64A MDmesh DM6 half-bridge Power MOSFET
- SH68N65DM6AG
- STMicroelectronics
-
1:
Rp349.675
-
192In Stock
|
Mouser Part No
511-SH68N65DM6AG
|
STMicroelectronics
|
MOSFETs Automotive grade N-channel 650V 35 mOhm 64A MDmesh DM6 half-bridge Power MOSFET
|
|
192In Stock
|
|
|
Rp349.675
|
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Rp249.873
|
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Rp195.018
|
|
|
Rp195.018
|
|
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Rp194.835
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
|
|
N-Channel
|
|
|
|
IGBT Modules SLLIMM high power IPM, 3-phase inverter, 10 A, 1200 V short-circuit rugged IGBT
- STGIK10M120T
- STMicroelectronics
-
1:
Rp786.860
-
69In Stock
|
Mouser Part No
511-STGIK10M120T
|
STMicroelectronics
|
IGBT Modules SLLIMM high power IPM, 3-phase inverter, 10 A, 1200 V short-circuit rugged IGBT
|
|
69In Stock
|
|
|
Rp786.860
|
|
|
Rp772.917
|
|
|
Rp541.390
|
|
|
Quote
|
|
|
Quote
|
|
Min.: 1
Mult.: 1
|
|
IGBT Modules
|
Si
|
Through Hole
|
SDIPHP-30
|
|
|
|
|
IGBTs Automotive ACEPACK SMIT half-bridge 650 V, 80 A HB series IGBT with diode
- STGSH80HB65DAG
- STMicroelectronics
-
1:
Rp356.096
-
189In Stock
|
Mouser Part No
511-STGSH80HB65DAG
|
STMicroelectronics
|
IGBTs Automotive ACEPACK SMIT half-bridge 650 V, 80 A HB series IGBT with diode
|
|
189In Stock
|
|
|
Rp356.096
|
|
|
Rp254.642
|
|
|
Rp231.160
|
|
|
Rp231.160
|
|
|
Rp199.421
|
|
Min.: 1
Mult.: 1
|
|
IGBT Transistors
|
Si
|
SMD/SMT
|
ACEPACK-5
|
|
|
|
|
IGBTs Trench gate field-stop 1200 V 50 A high-speed H series IGBT
- STGYA50H120DF2
- STMicroelectronics
-
1:
Rp111.727
-
560In Stock
|
Mouser Part No
511-STGYA50H120DF2
|
STMicroelectronics
|
IGBTs Trench gate field-stop 1200 V 50 A high-speed H series IGBT
|
|
560In Stock
|
|
|
Rp111.727
|
|
|
Rp79.805
|
|
|
Rp70.082
|
|
|
Rp68.431
|
|
|
Rp64.028
|
|
Min.: 1
Mult.: 1
|
|
IGBT Transistors
|
Si
|
Through Hole
|
|
|
|
|
|
MOSFETs Automotive-grade N-channel 1200 V, 1.45 Ohm typ., 7 A MDmesh K5 Power MOSFET
- STH12N120K5-2AG
- STMicroelectronics
-
1:
Rp220.335
-
686In Stock
-
1.000Expected 06/04/2026
|
Mouser Part No
511-STH12N120K5-2AG
|
STMicroelectronics
|
MOSFETs Automotive-grade N-channel 1200 V, 1.45 Ohm typ., 7 A MDmesh K5 Power MOSFET
|
|
686In Stock
1.000Expected 06/04/2026
|
|
|
Rp220.335
|
|
|
Rp178.323
|
|
|
Rp148.603
|
|
|
Rp135.210
|
|
|
Rp108.058
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
SMD/SMT
|
H2PAK-2
|
N-Channel
|
|
|
|
MOSFETs Automotive-grade N-channel 600 V, 76 mOhm typ., 27 A MDmesh DM9 Power MOSFET
- STH60N099DM9-2AG
- STMicroelectronics
-
1:
Rp106.407
-
1.142In Stock
-
1.000Expected 09/03/2026
|
Mouser Part No
511-STH60N099DM9-2AG
|
STMicroelectronics
|
MOSFETs Automotive-grade N-channel 600 V, 76 mOhm typ., 27 A MDmesh DM9 Power MOSFET
|
|
1.142In Stock
1.000Expected 09/03/2026
|
|
|
Rp106.407
|
|
|
Rp74.301
|
|
|
Rp60.175
|
|
|
Rp53.387
|
|
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Rp45.682
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
SMD/SMT
|
H2PAK-2
|
N-Channel
|
|
|
|
MOSFETs N-Channel Enhancement Mode 100V, 3.2mOhm max, 158A STripFET F8 Power MOSFET
- STL160N10F8
- STMicroelectronics
-
1:
Rp59.808
-
2.940In Stock
|
Mouser Part No
511-STL160N10F8
|
STMicroelectronics
|
MOSFETs N-Channel Enhancement Mode 100V, 3.2mOhm max, 158A STripFET F8 Power MOSFET
|
|
2.940In Stock
|
|
|
Rp59.808
|
|
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Rp38.894
|
|
|
Rp33.206
|
|
|
Rp28.069
|
|
|
Rp27.702
|
|
|
Quote
|
|
|
Quote
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
SMD/SMT
|
PowerFLAT-4
|
N-Channel
|
|
|
|
MOSFETs N-channel logic level 40 V, 1.0 mOhm max., 304 A, STripFET F8 Power MOSFET
- STL300N4LF8
- STMicroelectronics
-
1:
Rp47.333
-
2.769In Stock
|
Mouser Part No
511-STL300N4LF8
|
STMicroelectronics
|
MOSFETs N-channel logic level 40 V, 1.0 mOhm max., 304 A, STripFET F8 Power MOSFET
|
|
2.769In Stock
|
|
|
Rp47.333
|
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Rp30.638
|
|
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Rp20.914
|
|
|
Rp16.805
|
|
|
Rp13.796
|
|
|
View
|
|
|
Rp16.291
|
|
|
Rp13.668
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
SMD/SMT
|
PowerFLAT-8
|
N-Channel
|
|
|
|
MOSFETs Automotive N-Channel 40 V, 0.85 mOhm max., 350A STripFET F8 Power MOSFET
- STL325N4F8AG
- STMicroelectronics
-
1:
Rp59.625
-
2.554In Stock
|
Mouser Part No
511-STL325N4F8AG
|
STMicroelectronics
|
MOSFETs Automotive N-Channel 40 V, 0.85 mOhm max., 350A STripFET F8 Power MOSFET
|
|
2.554In Stock
|
|
|
Rp59.625
|
|
|
Rp38.894
|
|
|
Rp27.152
|
|
|
Rp23.116
|
|
|
Rp21.465
|
|
|
Rp18.713
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
SMD/SMT
|
PowerFLAT-4
|
N-Channel
|
|
|
|
MOSFETs N-channel 650 V, 19.9 mOhm typ., 95 A MDmesh M9 Power MOSFET
- STW65N023M9-4
- STMicroelectronics
-
1:
Rp319.587
-
531In Stock
|
Mouser Part No
511-STW65N023M9-4
|
STMicroelectronics
|
MOSFETs N-channel 650 V, 19.9 mOhm typ., 95 A MDmesh M9 Power MOSFET
|
|
531In Stock
|
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|
Rp319.587
|
|
|
Rp199.054
|
|
|
Rp198.871
|
|
|
Rp197.770
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
Through Hole
|
TO-247-4
|
N-Channel
|
|
|
|
MOSFETs N-channel 650 V, 39 mOhm typ., 54 A MDmesh M9 Power MOSFET
- STW65N045M9-4
- STMicroelectronics
-
1:
Rp173.737
-
580In Stock
|
Mouser Part No
511-STW65N045M9-4
|
STMicroelectronics
|
MOSFETs N-channel 650 V, 39 mOhm typ., 54 A MDmesh M9 Power MOSFET
|
|
580In Stock
|
|
|
Rp173.737
|
|
|
Rp129.156
|
|
|
Rp107.691
|
|
|
Rp95.950
|
|
|
Rp85.492
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
Through Hole
|
TO-247-4
|
N-Channel
|
|
|
|
MOSFETs N-channel 650 V, 19.9 mOhm typ., 95 A MDmesh M9 Power MOSFET
- STWA65N023M9
- STMicroelectronics
-
1:
Rp228.224
-
366In Stock
|
Mouser Part No
511-STWA65N023M9
|
STMicroelectronics
|
MOSFETs N-channel 650 V, 19.9 mOhm typ., 95 A MDmesh M9 Power MOSFET
|
|
366In Stock
|
|
|
Rp228.224
|
|
|
Rp139.613
|
|
|
Rp138.696
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
|
|
|
MOSFETs N-channel 650 V, 39 mOhm typ., 54 A MDmesh M9 Power MOSFET
- STWA65N045M9
- STMicroelectronics
-
1:
Rp174.837
-
1.195In Stock
|
Mouser Part No
511-STWA65N045M9
|
STMicroelectronics
|
MOSFETs N-channel 650 V, 39 mOhm typ., 54 A MDmesh M9 Power MOSFET
|
|
1.195In Stock
|
|
|
Rp174.837
|
|
|
Rp103.105
|
|
|
Rp87.144
|
|
|
Rp79.071
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
Through Hole
|
|
N-Channel
|
|
|
|
MOSFETs N-Ch 950V 1 Ohm 9A Zener 5 Power
- STI6N95K5
- STMicroelectronics
-
1:
Rp46.599
-
724In Stock
-
Verify Status with Factory
|
Mouser Part No
511-STI6N95K5
Verify Status with Factory
|
STMicroelectronics
|
MOSFETs N-Ch 950V 1 Ohm 9A Zener 5 Power
|
|
724In Stock
|
|
|
Rp46.599
|
|
|
Rp17.392
|
|
|
Rp16.915
|
|
|
Rp16.897
|
|
|
View
|
|
|
Rp16.732
|
|
|
Quote
|
|
Min.: 1
Mult.: 1
|
|
MOSFETs
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
|
Indonesia
