|
|
MOSFETs 1KV 6A
- IXFH6N100
- IXYS
-
1:
Rp222.354
-
226In Stock
-
NRND
|
Mouser Part No
747-IXFH6N100
NRND
|
IXYS
|
MOSFETs 1KV 6A
|
|
226In Stock
|
|
|
Rp222.354
|
|
|
Rp173.920
|
|
|
Rp144.750
|
|
|
Rp128.972
|
|
|
Rp122.184
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
1 kV
|
6 A
|
2 Ohms
|
- 20 V, 20 V
|
4.5 V
|
88 nC
|
- 55 C
|
+ 150 C
|
180 W
|
Enhancement
|
HyperFET
|
Tube
|
|
|
|
MOSFETs 4 Amps 1000V 2.8 Rds
- IXFA4N100Q
- IXYS
-
1:
Rp155.941
-
414In Stock
|
Mouser Part No
747-IXFA4N100Q
|
IXYS
|
MOSFETs 4 Amps 1000V 2.8 Rds
|
|
414In Stock
|
|
|
Rp155.941
|
|
|
Rp101.820
|
|
|
Rp97.784
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
1 kV
|
4 A
|
3 Ohms
|
- 20 V, 20 V
|
4.5 V
|
39 nC
|
- 55 C
|
+ 150 C
|
150 W
|
Enhancement
|
HyperFET
|
Tube
|
|
|
|
MOSFETs 6 Amps 1200V 2.4 Rds
- IXFH6N120
- IXYS
-
1:
Rp247.304
-
284In Stock
|
Mouser Part No
747-IXFH6N120
|
IXYS
|
MOSFETs 6 Amps 1200V 2.4 Rds
|
|
284In Stock
|
|
|
Rp247.304
|
|
|
Rp150.070
|
|
|
Rp144.383
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
1.2 kV
|
6 A
|
2.6 Ohms
|
- 20 V, 20 V
|
|
|
- 55 C
|
+ 150 C
|
300 W
|
Enhancement
|
HyperFET
|
Tube
|
|
|
|
MOSFETs N-Channel: Power MOSFET w/Fast Diode
- IXFT50N50P3
- IXYS
-
1:
Rp252.991
-
29In Stock
|
Mouser Part No
747-IXFT50N50P3
|
IXYS
|
MOSFETs N-Channel: Power MOSFET w/Fast Diode
|
|
29In Stock
|
|
|
Rp252.991
|
|
|
Rp188.964
|
|
|
Rp163.279
|
|
|
Rp154.473
|
|
|
Rp144.383
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
D3PAK-3 (TO-268-3)
|
N-Channel
|
1 Channel
|
500 V
|
50 A
|
125 mOhms
|
- 30 V, 30 V
|
3 V
|
85 nC
|
- 55 C
|
+ 150 C
|
960 W
|
Enhancement
|
HyperFET
|
Tube
|
|
|
|
MOSFETs 200V 58A
- IXFH58N20
- IXYS
-
300:
Rp192.633
-
Non-Stocked Lead-Time 4 Weeks
-
NRND
|
Mouser Part No
747-IXFH58N20
NRND
|
IXYS
|
MOSFETs 200V 58A
|
|
Non-Stocked Lead-Time 4 Weeks
|
|
Min.: 300
Mult.: 30
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
200 V
|
58 A
|
40 mOhms
|
- 20 V, 20 V
|
|
|
- 55 C
|
+ 150 C
|
300 W
|
Enhancement
|
HyperFET
|
Tube
|
|
|
|
MOSFETs Polar3 HiPerFETs MOSFET w/Fast Diode
- IXFA8N50P3
- IXYS
-
1:
Rp65.862
-
Non-Stocked
|
Mouser Part No
747-IXFA8N50P3
|
IXYS
|
MOSFETs Polar3 HiPerFETs MOSFET w/Fast Diode
|
|
Non-Stocked
|
|
|
Rp65.862
|
|
|
Rp42.930
|
|
|
Rp33.573
|
|
|
Rp28.069
|
|
|
Rp24.217
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
|
500 V
|
8 A
|
800 mOhms
|
|
|
|
|
|
|
|
HyperFET
|
Tube
|
|
|
|
MOSFETs DIODE Id48 BVdass500
- IXFK48N50
- IXYS
-
1:
Rp499.562
-
Non-Stocked Lead-Time 37 Weeks
|
Mouser Part No
747-IXFK48N50
|
IXYS
|
MOSFETs DIODE Id48 BVdass500
|
|
Non-Stocked Lead-Time 37 Weeks
|
|
|
Rp499.562
|
|
|
Rp377.744
|
|
|
Rp350.409
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-264-3
|
N-Channel
|
1 Channel
|
500 V
|
48 A
|
100 mOhms
|
- 20 V, 20 V
|
|
|
- 55 C
|
+ 150 C
|
500 W
|
Enhancement
|
HyperFET
|
Tube
|
|
|
|
MOSFETs 800V 34A
- IXFX34N80
- IXYS
-
300:
Rp357.380
-
Non-Stocked Lead-Time 27 Weeks
|
Mouser Part No
747-IXFX34N80
|
IXYS
|
MOSFETs 800V 34A
|
|
Non-Stocked Lead-Time 27 Weeks
|
|
Min.: 300
Mult.: 30
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
800 V
|
34 A
|
240 mOhms
|
- 20 V, 20 V
|
|
|
- 55 C
|
+ 150 C
|
560 W
|
Enhancement
|
HyperFET
|
Tube
|
|
|
|
MOSFETs 3.6 Amps 800V 3.6 Rds
- IXFA3N80
- IXYS
-
50:
Rp109.342
-
Non-Stocked
-
NRND
|
Mouser Part No
747-IXFA3N80
NRND
|
IXYS
|
MOSFETs 3.6 Amps 800V 3.6 Rds
|
|
Non-Stocked
|
|
|
Rp109.342
|
|
|
Rp90.996
|
|
|
Rp81.089
|
|
|
Rp75.586
|
|
Min.: 50
Mult.: 50
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
800 V
|
3.6 A
|
3.6 Ohms
|
- 20 V, 20 V
|
|
|
- 55 C
|
+ 150 C
|
100 W
|
Enhancement
|
HyperFET
|
Tube
|
|
|
|
MOSFETs 72 Amps 550V 0.07 Rds
- IXFB72N55Q2
- IXYS
-
1:
Rp577.899
-
Non-Stocked
-
NRND
|
Mouser Part No
747-IXFB72N55Q2
NRND
|
IXYS
|
MOSFETs 72 Amps 550V 0.07 Rds
|
|
Non-Stocked
|
|
|
Rp577.899
|
|
|
Rp492.957
|
|
|
Rp431.131
|
|
|
View
|
|
|
Quote
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
PLUS-264-3
|
N-Channel
|
1 Channel
|
550 V
|
72 A
|
72 mOhms
|
- 30 V, 30 V
|
|
|
- 55 C
|
+ 150 C
|
890 W
|
Enhancement
|
HyperFET
|
Tube
|
|
|
|
MOSFETs 80 Amps 500V 0.06 Rds
- IXFB80N50Q2
- IXYS
-
300:
Rp686.140
-
Non-Stocked
-
NRND
|
Mouser Part No
747-IXFB80N50Q2
NRND
|
IXYS
|
MOSFETs 80 Amps 500V 0.06 Rds
|
|
Non-Stocked
|
|
Min.: 300
Mult.: 25
|
|
|
Si
|
Through Hole
|
PLUS-264-3
|
N-Channel
|
1 Channel
|
500 V
|
80 A
|
60 mOhms
|
- 30 V, 30 V
|
5.5 V
|
250 nC
|
- 55 C
|
+ 150 C
|
960 W
|
Enhancement
|
HyperFET
|
Tube
|
|
|
|
MOSFETs 48 Amps 500V 0.1 Rds
- IXFG55N50
- IXYS
-
25:
Rp373.708
-
Non-Stocked
-
NRND
|
Mouser Part No
747-IXFG55N50
NRND
|
IXYS
|
MOSFETs 48 Amps 500V 0.1 Rds
|
|
Non-Stocked
|
|
|
Rp373.708
|
|
|
Rp330.045
|
|
|
Quote
|
|
|
Quote
|
|
Min.: 25
Mult.: 25
|
|
|
Si
|
Through Hole
|
TO-264-3
|
N-Channel
|
1 Channel
|
500 V
|
48 A
|
90 mOhms
|
- 20 V, 20 V
|
|
|
- 40 C
|
+ 150 C
|
400 W
|
Enhancement
|
HyperFET
|
Tube
|
|
|
|
MOSFETs 1KV 10A
- IXFH10N100
- IXYS
-
1:
Rp282.345
-
Non-Stocked
-
NRND
|
Mouser Part No
747-IXFH10N100
NRND
|
IXYS
|
MOSFETs 1KV 10A
|
|
Non-Stocked
|
|
|
Rp282.345
|
|
|
Rp218.501
|
|
|
Rp188.780
|
|
|
Quote
|
|
|
Quote
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
1 kV
|
10 A
|
1.2 Ohms
|
- 20 V, 20 V
|
|
|
- 55 C
|
+ 150 C
|
300 W
|
Enhancement
|
HyperFET
|
Tube
|
|
|
|
MOSFETs 11 Amps 800V
- IXFH11N80
- IXYS
-
30:
Rp181.442
-
Non-Stocked
-
NRND
|
Mouser Part No
747-IXFH11N80
NRND
|
IXYS
|
MOSFETs 11 Amps 800V
|
|
Non-Stocked
|
|
|
Rp181.442
|
|
|
Rp151.171
|
|
|
Rp134.660
|
|
|
Rp125.670
|
|
Min.: 30
Mult.: 30
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
800 V
|
11 A
|
950 mOhms
|
- 20 V, 20 V
|
|
|
- 55 C
|
+ 150 C
|
300 W
|
Enhancement
|
HyperFET
|
Tube
|
|
|
|
MOSFETs 1KV 12A
- IXFH12N100
- IXYS
-
300:
Rp209.144
-
Non-Stocked
-
NRND
|
Mouser Part No
747-IXFH12N100
NRND
|
IXYS
|
MOSFETs 1KV 12A
|
|
Non-Stocked
|
|
Min.: 300
Mult.: 30
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
1 kV
|
12 A
|
1.05 Ohms
|
- 20 V, 20 V
|
|
|
- 55 C
|
+ 150 C
|
300 W
|
Enhancement
|
HyperFET
|
Tube
|
|
|
|
MOSFETs 12 Amps 1200V 1.3 Rds
- IXFH12N120
- IXYS
-
30:
Rp263.999
-
Non-Stocked
-
NRND
|
Mouser Part No
747-IXFH12N120
NRND
|
IXYS
|
MOSFETs 12 Amps 1200V 1.3 Rds
|
|
Non-Stocked
|
|
|
Rp263.999
|
|
|
Rp228.224
|
|
|
Quote
|
|
|
Quote
|
|
Min.: 30
Mult.: 30
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
1.2 kV
|
12 A
|
1.4 Ohms
|
- 30 V, 30 V
|
|
|
- 55 C
|
+ 150 C
|
500 W
|
Enhancement
|
HyperFET
|
Tube
|
|
|
|
MOSFETs 900V 12A
- IXFH12N90
- IXYS
-
60:
Rp230.059
-
Non-Stocked
-
NRND
|
Mouser Part No
747-IXFH12N90
NRND
|
IXYS
|
MOSFETs 900V 12A
|
|
Non-Stocked
|
|
|
Rp230.059
|
|
|
Rp198.871
|
|
|
Quote
|
|
|
Quote
|
|
Min.: 60
Mult.: 30
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
900 V
|
12 A
|
1.1 Ohms
|
- 20 V, 20 V
|
|
|
- 55 C
|
+ 150 C
|
300 W
|
Enhancement
|
HyperFET
|
Tube
|
|
|
|
MOSFETs 13 Amps 1000V 0.9 Rds
- IXFH13N100
- IXYS
-
30:
Rp247.854
-
Non-Stocked
-
NRND
|
Mouser Part No
747-IXFH13N100
NRND
|
IXYS
|
MOSFETs 13 Amps 1000V 0.9 Rds
|
|
Non-Stocked
|
|
|
Rp247.854
|
|
|
Rp214.281
|
|
|
Quote
|
|
|
Quote
|
|
Min.: 30
Mult.: 30
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
1 kV
|
12.5 A
|
900 mOhms
|
- 20 V, 20 V
|
|
|
- 55 C
|
+ 150 C
|
300 W
|
Enhancement
|
HyperFET
|
Tube
|
|
|
|
MOSFETs 800V 13A
- IXFH13N80
- IXYS
-
300:
Rp148.970
-
Non-Stocked
-
NRND
|
Mouser Part No
747-IXFH13N80
NRND
|
IXYS
|
MOSFETs 800V 13A
|
|
Non-Stocked
|
|
|
Rp148.970
|
|
|
Rp141.081
|
|
|
Rp131.724
|
|
Min.: 300
Mult.: 30
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
800 V
|
13 A
|
800 mOhms
|
- 20 V, 20 V
|
|
|
- 55 C
|
+ 150 C
|
300 W
|
Enhancement
|
HyperFET
|
Tube
|
|
|
|
MOSFETs 13 Amps 800V 0.8 Rds
- IXFH13N80Q
- IXYS
-
30:
Rp172.452
-
Non-Stocked
-
NRND
|
Mouser Part No
747-IXFH13N80Q
NRND
|
IXYS
|
MOSFETs 13 Amps 800V 0.8 Rds
|
|
Non-Stocked
|
|
|
Rp172.452
|
|
|
Rp148.970
|
|
|
Rp141.081
|
|
|
Rp131.724
|
|
Min.: 30
Mult.: 30
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
800 V
|
13 A
|
700 mOhms
|
- 20 V, 20 V
|
|
|
- 55 C
|
+ 150 C
|
250 W
|
Enhancement
|
HyperFET
|
Tube
|
|
|
|
MOSFETs 13 Amps 900V 0.8 Rds
- IXFH13N90
- IXYS
-
30:
Rp198.871
-
Non-Stocked
-
NRND
|
Mouser Part No
747-IXFH13N90
NRND
|
IXYS
|
MOSFETs 13 Amps 900V 0.8 Rds
|
|
Non-Stocked
|
|
|
Rp198.871
|
|
|
Rp171.902
|
|
|
Rp162.729
|
|
|
Rp151.905
|
|
Min.: 30
Mult.: 30
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
900 V
|
13 A
|
800 mOhms
|
- 20 V, 20 V
|
|
|
- 55 C
|
+ 150 C
|
300 W
|
Enhancement
|
HyperFET
|
Tube
|
|
|
|
MOSFETs 14 Amps 800V 0.7 Rds
- IXFH14N80
- IXYS
-
30:
Rp202.723
-
Non-Stocked
-
NRND
|
Mouser Part No
747-IXFH14N80
NRND
|
IXYS
|
MOSFETs 14 Amps 800V 0.7 Rds
|
|
Non-Stocked
|
|
|
Rp202.723
|
|
|
Rp175.021
|
|
|
Rp165.848
|
|
|
Rp154.840
|
|
Min.: 30
Mult.: 30
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
800 V
|
14 A
|
700 mOhms
|
- 20 V, 20 V
|
|
|
- 55 C
|
+ 150 C
|
300 W
|
Enhancement
|
HyperFET
|
Tube
|
|
|
|
MOSFETs 15 Amps 600V
- IXFH15N60
- IXYS
-
30:
Rp128.239
-
Non-Stocked
-
NRND
|
Mouser Part No
747-IXFH15N60
NRND
|
IXYS
|
MOSFETs 15 Amps 600V
|
|
Non-Stocked
|
|
|
Rp128.239
|
|
|
Rp128.055
|
|
|
Rp125.670
|
|
Min.: 30
Mult.: 30
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
600 V
|
15 A
|
500 mOhms
|
- 20 V, 20 V
|
|
|
- 55 C
|
+ 150 C
|
300 W
|
Enhancement
|
HyperFET
|
Tube
|
|
|
|
MOSFETs 800V 15A
- IXFH15N80
- IXYS
-
30:
Rp182.176
-
Non-Stocked Lead-Time 44 Weeks
-
NRND
|
Mouser Part No
747-IXFH15N80
NRND
|
IXYS
|
MOSFETs 800V 15A
|
|
Non-Stocked Lead-Time 44 Weeks
|
|
|
Rp182.176
|
|
|
Rp151.721
|
|
|
Rp126.220
|
|
Min.: 30
Mult.: 30
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
800 V
|
15 A
|
600 mOhms
|
- 20 V, 20 V
|
|
|
- 55 C
|
+ 150 C
|
300 W
|
Enhancement
|
HyperFET
|
Tube
|
|
|
|
MOSFETs 600V 20A
- IXFH20N60
- IXYS
-
300:
Rp251.891
-
Non-Stocked
-
NRND
|
Mouser Part No
747-IXFH20N60
NRND
|
IXYS
|
MOSFETs 600V 20A
|
|
Non-Stocked
|
|
Min.: 300
Mult.: 30
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
600 V
|
20 A
|
350 mOhms
|
- 20 V, 20 V
|
4.5 V
|
170 nC
|
- 55 C
|
+ 150 C
|
300 W
|
Enhancement
|
HyperFET
|
Tube
|
|