|
|
MOSFETs HIGH POWER_NEW
- IPB65R065C7ATMA2
- Infineon Technologies
-
1:
Rp170.984,72
-
1.245In Stock
|
Mouser Part No
726-IPB65R065C7ATMA2
|
Infineon Technologies
|
MOSFETs HIGH POWER_NEW
|
|
1.245In Stock
|
|
Min.: 1
Mult.: 1
:
1.000
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
650 V
|
33 A
|
65 mOhms
|
20 V
|
4 V
|
64 nC
|
- 55 C
|
+ 150 C
|
171 W
|
Enhancement
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
MOSFETs HIGH POWER_NEW
- IPP65R065C7
- Infineon Technologies
-
1:
Rp166.581,68
-
365In Stock
|
Mouser Part No
726-IPP65R065C7
|
Infineon Technologies
|
MOSFETs HIGH POWER_NEW
|
|
365In Stock
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
650 V
|
33 A
|
58 mOhms
|
20 V
|
3 V
|
64 nC
|
- 55 C
|
+ 150 C
|
171 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
MOSFETs N-Ch 650V 10A ThinPAK-4 CoolMOS C7
- IPL65R230C7
- Infineon Technologies
-
1:
Rp65.311,76
-
6.299In Stock
|
Mouser Part No
726-IPL65R230C7
|
Infineon Technologies
|
MOSFETs N-Ch 650V 10A ThinPAK-4 CoolMOS C7
|
|
6.299In Stock
|
|
Min.: 1
Mult.: 1
:
3.000
|
|
|
Si
|
SMD/SMT
|
VSON-4
|
N-Channel
|
1 Channel
|
650 V
|
10 A
|
230 mOhms
|
20 V
|
4 V
|
20 nC
|
- 40 C
|
+ 150 C
|
67 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
MOSFETs N-Ch 650V 46A TO220-3 CoolMOS C7
- IPP65R045C7
- Infineon Technologies
-
1:
Rp223.637,74
-
713In Stock
|
Mouser Part No
726-IPP65R045C7
|
Infineon Technologies
|
MOSFETs N-Ch 650V 46A TO220-3 CoolMOS C7
|
|
713In Stock
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
650 V
|
46 A
|
40 mOhms
|
20 V
|
3 V
|
93 nC
|
- 55 C
|
+ 150 C
|
227 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
MOSFETs HIGH POWER BEST IN CLASS
- IPA65R045C7
- Infineon Technologies
-
1:
Rp224.188,12
-
168In Stock
|
Mouser Part No
726-IPA65R045C7
|
Infineon Technologies
|
MOSFETs HIGH POWER BEST IN CLASS
|
|
168In Stock
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
650 V
|
18 A
|
40 mOhms
|
20 V
|
3 V
|
93 nC
|
- 55 C
|
+ 150 C
|
35 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
MOSFETs HIGH POWER BEST IN CLASS
- IPA65R065C7
- Infineon Technologies
-
1:
Rp167.315,52
-
243In Stock
|
Mouser Part No
726-IPA65R065C7
|
Infineon Technologies
|
MOSFETs HIGH POWER BEST IN CLASS
|
|
243In Stock
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
650 V
|
15 A
|
58 mOhms
|
20 V
|
3 V
|
64 nC
|
- 55 C
|
+ 150 C
|
34 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
MOSFETs HIGH POWER_NEW
- IPB65R045C7ATMA2
- Infineon Technologies
-
1:
Rp231.343,06
-
6.970In Stock
|
Mouser Part No
726-IPB65R045C7ATMA2
|
Infineon Technologies
|
MOSFETs HIGH POWER_NEW
|
|
6.970In Stock
|
|
Min.: 1
Mult.: 1
:
1.000
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
MOSFETs HIGH POWER_NEW
- IPB65R095C7ATMA2
- Infineon Technologies
-
1:
Rp130.256,60
-
871In Stock
|
Mouser Part No
726-IPB65R095C7ATMA2
|
Infineon Technologies
|
MOSFETs HIGH POWER_NEW
|
|
871In Stock
|
|
Min.: 1
Mult.: 1
:
1.000
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
650 V
|
24 A
|
84 mOhms
|
20 V
|
3 V
|
45 nC
|
- 55 C
|
+ 150 C
|
128 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
MOSFETs HIGH POWER_NEW
- IPB65R190C7ATMA2
- Infineon Technologies
-
1:
Rp75.952,44
-
2.993In Stock
|
Mouser Part No
726-IPB65R190C7ATMA2
|
Infineon Technologies
|
MOSFETs HIGH POWER_NEW
|
|
2.993In Stock
|
|
Min.: 1
Mult.: 1
:
1.000
|
|
|
Si
|
SMD/SMT
|
TO-263
|
N-Channel
|
1 Channel
|
650 V
|
13 A
|
404 mOhms
|
20 V
|
3.5 V
|
23 nC
|
- 55 C
|
+ 150 C
|
72 W
|
Enhancement
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
MOSFETs N-Ch 650V 11A DPAK-2 CoolMOS C7
- IPD65R225C7
- Infineon Technologies
-
1:
Rp62.743,32
-
1.302In Stock
|
Mouser Part No
726-IPD65R225C7
|
Infineon Technologies
|
MOSFETs N-Ch 650V 11A DPAK-2 CoolMOS C7
|
|
1.302In Stock
|
|
Min.: 1
Mult.: 1
:
2.500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
650 V
|
11 A
|
225 mOhms
|
20 V
|
4 V
|
20 nC
|
- 55 C
|
+ 150 C
|
63 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
MOSFETs HIGH POWERNEW
- IPW65R095C7
- Infineon Technologies
-
1:
Rp148.235,68
-
678In Stock
|
Mouser Part No
726-IPW65R095C7
|
Infineon Technologies
|
MOSFETs HIGH POWERNEW
|
|
678In Stock
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
650 V
|
24 A
|
84 mOhms
|
20 V
|
3 V
|
45 nC
|
- 55 C
|
+ 150 C
|
128 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
MOSFETs HIGH POWER_NEW
- IPW65R190C7
- Infineon Technologies
-
1:
Rp89.895,40
-
211In Stock
-
NRND
|
Mouser Part No
726-IPW65R190C7
NRND
|
Infineon Technologies
|
MOSFETs HIGH POWER_NEW
|
|
211In Stock
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
650 V
|
13 A
|
168 mOhms
|
20 V
|
3.5 V
|
23 nC
|
- 55 C
|
+ 150 C
|
72 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
MOSFETs N-Ch 650V 75A TO247-3 CoolMOS C7
- IPW65R019C7
- Infineon Technologies
-
1:
Rp456.081,56
-
488In Stock
|
Mouser Part No
726-IPW65R019C7
|
Infineon Technologies
|
MOSFETs N-Ch 650V 75A TO247-3 CoolMOS C7
|
|
488In Stock
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
650 V
|
75 A
|
19 mOhms
|
20 V
|
3 V
|
215 nC
|
- 55 C
|
+ 150 C
|
446 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
MOSFETs N-Ch 650V 46A TO247-3 CoolMOS C7
- IPW65R045C7
- Infineon Technologies
-
1:
Rp230.242,30
-
404In Stock
|
Mouser Part No
726-IPW65R045C7
|
Infineon Technologies
|
MOSFETs N-Ch 650V 46A TO247-3 CoolMOS C7
|
|
404In Stock
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
650 V
|
46 A
|
40 mOhms
|
20 V
|
3.5 V
|
93 nC
|
- 55 C
|
+ 150 C
|
227 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
MOSFETs HIGH POWER BEST IN CLASS
- IPA65R125C7XKSA1
- Infineon Technologies
-
1:
Rp101.820,30
-
59In Stock
|
Mouser Part No
726-IPA65R125C7XKSA1
|
Infineon Technologies
|
MOSFETs HIGH POWER BEST IN CLASS
|
|
59In Stock
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
650 V
|
10 A
|
125 mOhms
|
20 V
|
3 V
|
35 nC
|
- 55 C
|
+ 150 C
|
32 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
MOSFETs HIGH POWER BEST IN CLASS
- IPA65R190C7XKSA1
- Infineon Technologies
-
1:
Rp68.063,66
-
815In Stock
|
Mouser Part No
726-IPA65R190C7XKSA1
|
Infineon Technologies
|
MOSFETs HIGH POWER BEST IN CLASS
|
|
815In Stock
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
650 V
|
8 A
|
168 mOhms
|
20 V
|
3 V
|
23 nC
|
- 55 C
|
+ 150 C
|
30 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
MOSFETs HIGH POWER_NEW
- IPD65R190C7
- Infineon Technologies
-
1:
Rp65.311,76
-
1.076In Stock
|
Mouser Part No
726-IPD65R190C7
|
Infineon Technologies
|
MOSFETs HIGH POWER_NEW
|
|
1.076In Stock
|
|
Min.: 1
Mult.: 1
:
2.500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
650 V
|
13 A
|
190 mOhms
|
20 V
|
3 V
|
23 nC
|
- 55 C
|
+ 150 C
|
72 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape
|
|
|
|
MOSFETs HIGH POWER_NEW
- IPP65R095C7
- Infineon Technologies
-
1:
Rp130.806,98
-
59In Stock
-
500Expected 16/02/2027
|
Mouser Part No
726-IPP65R095C7
|
Infineon Technologies
|
MOSFETs HIGH POWER_NEW
|
|
59In Stock
500Expected 16/02/2027
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
650 V
|
24 A
|
84 mOhms
|
20 V
|
3 V
|
45 nC
|
- 55 C
|
+ 150 C
|
128 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
MOSFETs HIGH POWER_NEW
- IPW65R065C7
- Infineon Technologies
-
1:
Rp178.873,50
-
158In Stock
|
Mouser Part No
726-IPW65R065C7
|
Infineon Technologies
|
MOSFETs HIGH POWER_NEW
|
|
158In Stock
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
650 V
|
33 A
|
65 mOhms
|
20 V
|
3 V
|
64 nC
|
- 55 C
|
+ 150 C
|
171 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
MOSFETs N-Ch 700V 75A TO247-4
- IPZ65R019C7
- Infineon Technologies
-
1:
Rp440.304,00
-
71In Stock
|
Mouser Part No
726-IPZ65R019C7
|
Infineon Technologies
|
MOSFETs N-Ch 700V 75A TO247-4
|
|
71In Stock
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
650 V
|
75 A
|
17 mOhms
|
20 V
|
3 V
|
215 nC
|
- 55 C
|
+ 150 C
|
446 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
MOSFETs N-Ch 700V 46A TO247-4
- IPZ65R045C7
- Infineon Technologies
-
1:
Rp256.293,62
-
380On Order
|
Mouser Part No
726-IPZ65R045C7
|
Infineon Technologies
|
MOSFETs N-Ch 700V 46A TO247-4
|
|
380On Order
On Order:
140 Expected 25/02/2027
240 Expected 07/10/2027
Factory Lead Time:
52 Weeks
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
650 V
|
46 A
|
40 mOhms
|
20 V
|
3 V
|
93 nC
|
- 55 C
|
+ 150 C
|
227 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
MOSFETs 650V CoolMOS C7 Power Trans; 225mOhm
- IPP65R225C7
- Infineon Technologies
-
500:
Rp25.317,48
-
Non-Stocked Lead-Time 22 Weeks
|
Mouser Part No
726-IPB65R225C7
|
Infineon Technologies
|
MOSFETs 650V CoolMOS C7 Power Trans; 225mOhm
|
|
Non-Stocked Lead-Time 22 Weeks
|
|
Min.: 500
Mult.: 500
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
650 V
|
11 A
|
199 mOhms
|
20 V
|
3 V
|
20 nC
|
- 55 C
|
+ 150 C
|
63 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
MOSFETs HIGH POWER BEST IN CLASS
- IPL65R070C7
- Infineon Technologies
-
3.000:
Rp79.988,56
-
Non-Stocked Lead-Time 39 Weeks
|
Mouser Part No
726-IPL65R070C7
|
Infineon Technologies
|
MOSFETs HIGH POWER BEST IN CLASS
|
|
Non-Stocked Lead-Time 39 Weeks
|
|
Min.: 3.000
Mult.: 3.000
:
3.000
|
|
|
Si
|
SMD/SMT
|
VSON-4
|
N-Channel
|
1 Channel
|
650 V
|
28 A
|
62 mOhms
|
20 V
|
3 V
|
64 nC
|
- 40 C
|
+ 150 C
|
169 W
|
Enhancement
|
CoolMOS
|
Reel
|
|
|
|
MOSFETs HIGH POWER BEST IN CLASS
- IPL65R099C7
- Infineon Technologies
-
3.000:
Rp54.854,54
-
Non-Stocked Lead-Time 39 Weeks
|
Mouser Part No
726-IPL65R099C7
|
Infineon Technologies
|
MOSFETs HIGH POWER BEST IN CLASS
|
|
Non-Stocked Lead-Time 39 Weeks
|
|
Min.: 3.000
Mult.: 3.000
:
3.000
|
|
|
Si
|
SMD/SMT
|
VSON-4
|
N-Channel
|
1 Channel
|
650 V
|
21 A
|
88 mOhms
|
20 V
|
3 V
|
45 nC
|
- 40 C
|
+ 150 C
|
128 W
|
Enhancement
|
CoolMOS
|
Reel
|
|
|
|
MOSFETs 650V CoolMOS C7 Power Trans; 130mOhm
- IPL65R130C7
- Infineon Technologies
-
3.000:
Rp42.929,64
-
Non-Stocked Lead-Time 39 Weeks
|
Mouser Part No
726-IPL65R130C7
|
Infineon Technologies
|
MOSFETs 650V CoolMOS C7 Power Trans; 130mOhm
|
|
Non-Stocked Lead-Time 39 Weeks
|
|
Min.: 3.000
Mult.: 3.000
:
3.000
|
|
|
Si
|
SMD/SMT
|
VSON-4
|
N-Channel
|
1 Channel
|
650 V
|
15 A
|
115 mOhms
|
20 V
|
3 V
|
35 nC
|
- 40 C
|
+ 150 C
|
102 W
|
Enhancement
|
CoolMOS
|
Reel
|
|