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SiC MOSFETs

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Part #

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 8.5 mOhm typ., 239 A in a STPAK high creepage package

SCTHC250N120G3AG
STMicroelectronics
1: Rp1.408.789
33In Stock
61On Order
New Product

Mfr. Part No.
SCTHC250N120G3AG

Mouser Part No
511-SCTHC250N120G3AG

New Product

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 8.5 mOhm typ., 239 A in a STPAK high creepage package

Datasheet

33In Stock

61On Order

Rp1.408.789

Rp1.116.721

Rp952.891

Min.: 1
Mult.: 1

Through Hole

STPAK-4

N-Channel

1 Channel

1.2 kV

239 A

8.5 mOhms

- 10 V, + 22 V

4.4 V

304 nC

- 55 C

+ 200 C

994 W

AEC-Q100

SiC MOSFETs Silicon carbide Power MOSFET 650 V, 55 mOhm typ., 40 A in a PowerFLAT 8x8 HV pac

SCTL35N65G2V
STMicroelectronics
1: Rp333.714
2.309In Stock

Mfr. Part No.
SCTL35N65G2V

Mouser Part No
511-SCTL35N65G2V

STMicroelectronics

SiC MOSFETs Silicon carbide Power MOSFET 650 V, 55 mOhm typ., 40 A in a PowerFLAT 8x8 HV pac

Learn More

Datasheet

2.309In Stock

Cut Tape

Rp333.714

Rp236.663

Rp206.026

Rp205.842

View

Reel

Rp168.416

MouseReel Available

Min.: 1
Mult.: 1

: 3.000

SMD/SMT

PowerFLAT-5

N-Channel

1 Channel

650 V

40 A

67 mOhms

- 10 V, + 22 V

5 V

73 nC

- 55 C

+ 175 C

417 W

Enhancement

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 19.2 mOhm typ., 90 A

SCT019HU120G3AG
STMicroelectronics
1: Rp405.814
7In Stock
600Expected 02/04/2027
New Product

Mfr. Part No.
SCT019HU120G3AG

Mouser Part No
511-SCT019HU120G3AG

New Product

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 19.2 mOhm typ., 90 A

Learn More

Datasheet

7In Stock

600Expected 02/04/2027

Cut Tape

Rp405.814

Rp295.921

Rp247.304

Reel

Rp235.012

Min.: 1
Mult.: 1

: 600

AEC-Q100

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HU3PAK package

SCT020HU120G3AG
STMicroelectronics
1: Rp417.555
11In Stock
1.200On Order
New Product

Mfr. Part No.
SCT020HU120G3AG

Mouser Part No
511-SCT020HU120G3AG

New Product

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HU3PAK package

Learn More

Datasheet

11In Stock

1.200On Order

Cut Tape

Rp417.555

Rp311.882

Rp263.265

Reel

Rp238.498

MouseReel Available

Min.: 1
Mult.: 1

: 600

SMD/SMT

HU3PAK-7

N-Channel

1 Channel

1.2 kV

100 A

28 mOhms

- 10 V, + 22 V

3 V

121 nC

- 55 C

555 W

Enhancement

AEC-Q101

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an HiP247-4 package

SCT012W90G3-4AG
STMicroelectronics
1: Rp407.281
630In Stock

Mfr. Part No.
SCT012W90G3-4AG

Mouser Part No
511-SCT012W90G3-4AG

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an HiP247-4 package

Learn More

Datasheet

630In Stock

Rp407.281

Rp256.661

Rp217.217

Min.: 1
Mult.: 1

Through Hole

HiP247-3

N-Channel

1 Channel

900 V

110 A

15.8 mOhms

- 10 V, + 22 V

3.1 V

138 nC

- 55 C

+ 200 C

625 W

Enhancement

AEC-Q101

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 15 mOhm typ., 129 A in an HiP247-4 package

SCT015W120G3-4AG
STMicroelectronics
1: Rp490.205
542In Stock

Mfr. Part No.
SCT015W120G3-4AG

Mouser Part No
511-SCT015W120G3-4AG

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 15 mOhm typ., 129 A in an HiP247-4 package

Learn More

Datasheet

542In Stock

Rp490.205

Rp392.421

Rp339.401

Rp321.238

Quote

Min.: 1
Mult.: 1

Through Hole

HiP-247-4

N-Channel

1 Channel

1.2 kV

129 A

15 mOhms

- 18 V, + 18 V

4.2 V

167 nC

- 55 C

+ 200 C

673 W

Enhancement

AEC-Q101

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an HiP247-4 package

SCT018W65G3-4AG
STMicroelectronics
1: Rp342.703
448In Stock

Mfr. Part No.
SCT018W65G3-4AG

Mouser Part No
511-SCT018W65G3-4AG

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an HiP247-4 package

Datasheet

448In Stock

Rp342.703

Rp260.880

Rp217.400

Rp193.734

Rp181.075

Min.: 1
Mult.: 1

Through Hole

HiP-247-4

N-Channel

1 Channel

650 V

55 A

27 mOhms

- 18 V, + 18 V

4.2 V

77 nC

- 55 C

+ 200 C

398 W

Enhancement

AEC-Q101

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HiP247-4 package

SCT020W120G3-4AG
STMicroelectronics
1: Rp371.140
311In Stock
600On Order

Mfr. Part No.
SCT020W120G3-4AG

Mouser Part No
511-SCT020W120G3-4AG

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HiP247-4 package

Learn More

Datasheet

311In Stock

600On Order

Rp371.140

Rp232.077

Rp220.702

Min.: 1
Mult.: 1

Through Hole

Hip247-4

N-Channel

1 Channel

1.2 kV

100 A

28 mOhms

- 10 V, + 22 V

3 V

121 nC

- 55 C

+ 200 C

541 W

Enhancement

AEC-Q101

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247 package

SCT025W120G3AG
STMicroelectronics
1: Rp347.657
289In Stock
600Expected 21/05/2027

Mfr. Part No.
SCT025W120G3AG

Mouser Part No
511-SCT025W120G3AG

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247 package

Learn More

Datasheet

289In Stock

600Expected 21/05/2027

Rp347.657

Rp216.299

Rp202.907

Min.: 1
Mult.: 1

Through Hole

HiP247-3

N-Channel

1 Channel

1.2 kV

56 A

37 mOhms

- 10 V, + 22 V

3 V

73 nC

- 55 C

+ 200 C

388 W

Enhancement

AEC-Q101

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A in an H2PAK-7 package

SCT027H65G3AG
STMicroelectronics
1: Rp249.689
671In Stock

Mfr. Part No.
SCT027H65G3AG

Mouser Part No
511-SCT027H65G3AG

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A in an H2PAK-7 package

Learn More

Datasheet

671In Stock

Cut Tape

Rp249.689

Rp174.287

Rp141.631

Reel

Rp132.275

Min.: 1
Mult.: 1

: 1.000

SMD/SMT

H2PAK-7

N-Channel

1 Channel

650 V

60 A

39.3 mOhms

- 10 V, + 22 V

3 V

48.6 nC

- 55 C

+ 175 C

300 W

Enhancement

AEC-Q101

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A

SCT027W65G3-4AG
STMicroelectronics
1: Rp303.810
246In Stock

Mfr. Part No.
SCT027W65G3-4AG

Mouser Part No
511-SCT027W65G3-4AG

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A

Learn More

Datasheet

246In Stock

Rp303.810

Rp231.893

Rp161.078

Rp137.045

Min.: 1
Mult.: 1

Through Hole

HiP-247-4

N-Channel

1 Channel

650 V

60 A

29 mOhms

- 18 V, + 18 V

4.2 V

51 nC

- 55 C

+ 200 C

313 W

Enhancement

AEC-Q100

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247 package

SCT040W120G3AG
STMicroelectronics
1: Rp254.826
336In Stock

Mfr. Part No.
SCT040W120G3AG

Mouser Part No
511-SCT040W120G3AG

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247 package

Learn More

Datasheet

336In Stock

Rp254.826

Rp179.057

Rp136.678

Min.: 1
Mult.: 1

Through Hole

HiP-247-3

N-Channel

1 Channel

1.2 kV

40 A

54 mOhms

- 18 V, + 18 V

4.2 V

56 nC

- 55 C

+ 200 C

312 W

Enhancement

AEC-Q101

SiC MOSFETs Silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package

SCT040W65G3-4
STMicroelectronics
1: Rp211.713
487In Stock

Mfr. Part No.
SCT040W65G3-4

Mouser Part No
511-SCT040W65G3-4

STMicroelectronics

SiC MOSFETs Silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package

Learn More

Datasheet

487In Stock

Rp211.713

Rp127.138

Rp107.691

Min.: 1
Mult.: 1

Through Hole

HiP247-4

N-Channel

1 Channel

650 V

30 A

63 mOhms

- 10 V, + 22 V

3 V

37.5 nC

- 55 C

+ 200 C

240 W

Enhancement

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package

SCT040W65G3-4AG
STMicroelectronics
1: Rp246.203
481In Stock

Mfr. Part No.
SCT040W65G3-4AG

Mouser Part No
511-SCT040W65G3-4AG

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package

Learn More

Datasheet

481In Stock

Rp246.203

Rp178.323

Rp152.639

Rp131.541

Min.: 1
Mult.: 1

Through Hole

HiP247-4

N-Channel

1 Channel

650 V

30 A

63 mOhms

- 10 V, + 22 V

3 V

37.5 nC

- 55 C

+ 200 C

240 W

Enhancement

AEC-Q101

SiC MOSFETs Silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A in a TO-LL package

SCT055TO65G3
STMicroelectronics
1: Rp167.866
1.414In Stock

Mfr. Part No.
SCT055TO65G3

Mouser Part No
511-SCT055TO65G3

STMicroelectronics

SiC MOSFETs Silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A in a TO-LL package

Learn More

Datasheet

1.414In Stock

Cut Tape

Rp167.866

Rp114.663

Rp94.665

Rp86.043

Rp78.704

Reel

Rp78.704

Min.: 1
Mult.: 1

: 1.800

SMD/SMT

TOLL-8

N-Channel

1 Channel

650 V

30 A

72 mOhms

- 10 V, + 22 V

3 V

31 nC

- 55 C

+ 175 C

234 W

Enhancement

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an H2PAK-7 package

SCT012H90G3AG
STMicroelectronics
1: Rp403.795
11In Stock
1.000Expected 26/03/2027

Mfr. Part No.
SCT012H90G3AG

Mouser Part No
511-SCT012H90G3AG

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an H2PAK-7 package

Learn More

Datasheet

11In Stock

1.000Expected 26/03/2027

Cut Tape

Rp403.795

Rp289.683

Rp263.082

Rp262.898

Reel

Rp245.653

Min.: 1
Mult.: 1

: 1.000

SMD/SMT

H2PAK-7

N-Channel

1 Channel

900 V

110 A

12 mOhms

- 18 V, + 18 V

4.2 V

138 nC

- 55 C

+ 175 C

625 W

Enhancement

AEC-Q101

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an H2PAK-7 package

SCT018H65G3AG
STMicroelectronics
1: Rp303.993
22In Stock
1.000Expected 12/02/2027

Mfr. Part No.
SCT018H65G3AG

Mouser Part No
511-SCT018H65G3AG

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an H2PAK-7 package

Learn More

Datasheet

22In Stock

1.000Expected 12/02/2027

Cut Tape

Rp303.993

Rp214.465

Rp182.726

Reel

Rp170.618

MouseReel Available

Min.: 1
Mult.: 1

: 1.000

SMD/SMT

H2PAK-7

N-Channel

1 Channel

650 V

55 A

27 mOhms

- 18 V, + 18 V

4.2 V

79.4 nC

- 55 C

+ 175 C

385 W

Enhancement

AEC-Q101

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247-4 package

SCT025W120G3-4AG
STMicroelectronics
1: Rp387.101
13In Stock
1.200On Order

Mfr. Part No.
SCT025W120G3-4AG

Mouser Part No
511-SCT025W120G3-4AG

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247-4 package

Learn More

Datasheet

13In Stock

1.200On Order

Rp387.101

Rp267.118

Rp243.818

Rp224.188

Min.: 1
Mult.: 1

Through Hole

HiP-247-4

N-Channel

1 Channel

1.2 kV

56 A

37 mOhms

- 18 V, + 18 V

4.2 V

73 nC

- 55 C

+ 200 C

388 W

Enhancement

AEC-Q101

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 40 mOhm typ., 30 A

SCT040HU65G3AG
STMicroelectronics
1: Rp250.056
21In Stock
600On Order

Mfr. Part No.
SCT040HU65G3AG

Mouser Part No
511-SCT040HU65G3AG

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 40 mOhm typ., 30 A

Learn More

Datasheet

21In Stock

600On Order

Cut Tape

Rp250.056

Rp174.470

Rp141.815

Reel

Rp132.458

MouseReel Available

Min.: 1
Mult.: 1

: 600

SMD/SMT

H2PAK-2

N-Channel

1 Channel

650 V

7 A

40 mOhms

- 30 V, + 30 V

5 V

36 nC

- 55 C

+ 150 C

266 W

Enhancement

AEC-Q101

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A

SCT040W120G3-4AG
STMicroelectronics
1: Rp258.128
243In Stock
600Expected 05/03/2027

Mfr. Part No.
SCT040W120G3-4AG

Mouser Part No
511-SCT040W120G3-4AG

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A

Learn More

Datasheet

243In Stock

600Expected 05/03/2027

Rp258.128

Rp180.525

Rp136.678

Rp120.717

Rp120.533

Min.: 1
Mult.: 1

Through Hole

HiP-247-4

N-Channel

1 Channel

1.2 kV

40 A

54 mOhms

- 18 V, + 18 V

4.2 V

56 nC

- 55 C

+ 200 C

312 W

Enhancement

AEC-Q100

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HiP247-4 package

SCT070W120G3-4AG
STMicroelectronics
1: Rp276.841
20In Stock
1.200Expected 29/01/2027

Mfr. Part No.
SCT070W120G3-4AG

Mouser Part No
511-SCT070W120G3-4AG

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HiP247-4 package

Learn More

Datasheet

20In Stock

1.200Expected 29/01/2027

Rp276.841

Rp207.677

Rp161.445

Rp142.548

Min.: 1
Mult.: 1

Through Hole

HiP-247-4

N-Channel

1 Channel

1.2 kV

30 A

87 mOhms

- 18 V, + 18 V

4.2 V

41 nC

- 55 C

+ 200 C

236 W

Enhancement

AEC-Q101

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V 40 mOhm typ. 30 A

SCT040H65G3AG
STMicroelectronics
1: Rp222.170
760In Stock

Mfr. Part No.
SCT040H65G3AG

Mouser Part No
511-SCT040H65G3AG

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V 40 mOhm typ. 30 A

Learn More

Datasheet

760In Stock

Cut Tape

Rp222.170

Rp154.106

Rp121.634

Reel

Rp115.029

MouseReel Available

Min.: 1
Mult.: 1

: 1.000

SMD/SMT

N-Channel

1 Channel

650 V

30 A

40 mOhms

- 10 V, + 22 V

4.2 V

39.5 nC

- 55 C

+ 175 C

221 W

Enhancement

AEC-Q101

SiC MOSFETs Silicon carbide Power MOSFET 1700 V, 1.0 Ohm typ., 7 A in an HiP247 package

SCT1000N170
STMicroelectronics
1: Rp174.470
459In Stock

Mfr. Part No.
SCT1000N170

Mouser Part No
511-SCT1000N170

STMicroelectronics

SiC MOSFETs Silicon carbide Power MOSFET 1700 V, 1.0 Ohm typ., 7 A in an HiP247 package

Learn More

Datasheet

459In Stock

Rp174.470

Rp119.249

Rp99.252

Rp73.751

Rp72.100

Min.: 1
Mult.: 1

Through Hole

HiP-247-3

N-Channel

1 Channel

1.7 kV

6 A

1 Ohms

- 10 V, + 25 V

2.1 V

14 nC

- 55 C

+ 200 C

120 W

Enhancement

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 169 mOhm typ., 20 A in an

SCT20N120AG
STMicroelectronics
1: Rp313.900
334In Stock

Mfr. Part No.
SCT20N120AG

Mouser Part No
511-SCT20N120AG

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 169 mOhm typ., 20 A in an

Learn More

Datasheet

334In Stock

Rp313.900

Rp222.537

Rp165.664

Rp148.603

Quote

Min.: 1
Mult.: 1

Through Hole

N-Channel

1 Channel

1.2 kV

20 A

239 mOhms

- 20 V, + 20 V

3.5 V

45 nC

- 55 C

+ 200 C

175 W

Enhancement

AEC-Q101

SiC MOSFETs Silicon carbide Power MOSFET 650 V, 18 mOhm typ., 40 A in a PowerFLAT 8x8 HV pac

SCTL90N65G2V
STMicroelectronics
1: Rp572.395
1.301In Stock

Mfr. Part No.
SCTL90N65G2V

Mouser Part No
511-SCTL90N65G2V

STMicroelectronics

SiC MOSFETs Silicon carbide Power MOSFET 650 V, 18 mOhm typ., 40 A in a PowerFLAT 8x8 HV pac

Learn More

Datasheet

1.301In Stock

Cut Tape

Rp572.395

Rp419.206

Rp409.299

Rp409.116

Rp387.651

Reel

Rp387.651

MouseReel Available

Min.: 1
Mult.: 1

: 3.000

SMD/SMT

PowerFLAT-5

N-Channel

1 Channel

650 V

40 A

18 mOhms

- 10 V, + 22 V

5 V

157 nC

- 55 C

+ 175 C

935 W

Enhancement

SiC MOSFETs

Customer Service Office

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8.5 mOhms
10.5 mOhms
12 mOhms
15 mOhms
15.8 mOhms
18 mOhms
22 mOhms
26 mOhms
27 mOhms
28 mOhms
29 mOhms
37 mOhms
39.3 mOhms
40 mOhms
54 mOhms
63 mOhms
67 mOhms
72 mOhms
87 mOhms
100 mOhms

14 nC
22 nC
29 nC
31 nC
32 nC
36 nC
37 nC
37.5 nC
39.5 nC
41 nC
42.5 nC
45 nC
48.6 nC
51 nC
54 nC
56 nC
61 nC
73 nC
76 nC
77 nC

120 W
150 W
175 W
185 W
210 W
221 W
223 W
234 W
236 W
240 W
266 W
278 W
288 W
300 W
312 W
313 W
375 W
385 W
388 W
398 W