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SiC MOSFETs

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Image	Part #	Mfr.	Description	Datasheet	Availability	Pricing (IDR) Filter the results in the table by unit price based on your quantity.	Qty.	Mounting Style	Package/Case	Number of Channels	Vds - Drain-Source Breakdown Voltage	Id - Continuous Drain Current	Rds On - Drain-Source Resistance	Vgs - Gate-Source Voltage	Vgs th - Gate-Source Threshold Voltage	Qg - Gate Charge	Minimum Operating Temperature	Maximum Operating Temperature	Pd - Power Dissipation	Channel Mode	Qualification
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 19.2 mOhm typ., 90 A SCT019HU120G3AG STMicroelectronics 1: Rp385.632,92 1In Stock 600Expected 30/07/2027 New Product	Mfr. Part No. SCT019HU120G3AG Mouser Part No 511-SCT019HU120G3AG New Product	STMicroelectronics	SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 19.2 mOhm typ., 90 A Learn More about STMicroelectronics stm silicon carbide mosfets	Datasheet	1In Stock 600Expected 30/07/2027	Cut Tape Rp385.632,92 Rp288.032,20 Rp249.138,68 Reel Rp235.929,56	Min.: 1 Mult.: 1 : 600														AEC-Q100
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an HiP247-4 package SCT012W90G3-4AG STMicroelectronics 1: Rp445.991,26 558In Stock	Mfr. Part No. SCT012W90G3-4AG Mouser Part No 511-SCT012W90G3-4AG	STMicroelectronics	SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an HiP247-4 package Learn More about STMicroelectronics stm automotive grade mosfets	Datasheet	558In Stock	Rp445.991,26 Rp357.013,16 Rp308.763,18 Rp292.435,24 Quote Quote	Min.: 1 Mult.: 1	Through Hole	HiP247-3	1 Channel	900 V	110 A	15.8 mOhms	- 10 V, + 22 V	3.1 V	138 nC	- 55 C	+ 200 C	625 W	Enhancement	AEC-Q101
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 15 mOhm typ., 129 A in an HiP247-4 package SCT015W120G3-4AG STMicroelectronics 1: Rp508.551,12 443In Stock	Mfr. Part No. SCT015W120G3-4AG Mouser Part No 511-SCT015W120G3-4AG	STMicroelectronics	SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 15 mOhm typ., 129 A in an HiP247-4 package Learn More about STMicroelectronics stm automotive grade mosfets	Datasheet	443In Stock	Rp508.551,12 Rp407.097,74 Rp352.059,74 Rp333.346,82 Quote Quote	Min.: 1 Mult.: 1	Through Hole	HiP-247-4	1 Channel	1.2 kV	129 A	15 mOhms	- 18 V, + 18 V	4.2 V	167 nC	- 55 C	+ 200 C	673 W	Enhancement	AEC-Q101
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HiP247-4 package SCT020W120G3-4AG STMicroelectronics 1: Rp367.286,92 181In Stock 600Expected 23/07/2027	Mfr. Part No. SCT020W120G3-4AG Mouser Part No 511-SCT020W120G3-4AG	STMicroelectronics	SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HiP247-4 package Learn More about STMicroelectronics stm automotive grade mosfets	Datasheet	181In Stock 600Expected 23/07/2027	Rp367.286,92 Rp217.583,56	Min.: 1 Mult.: 1	Through Hole	Hip247-4	1 Channel	1.2 kV	100 A	28 mOhms	- 10 V, + 22 V	3 V	121 nC	- 55 C	+ 200 C	541 W	Enhancement	AEC-Q101
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A in an H2PAK-7 package SCT027H65G3AG STMicroelectronics 1: Rp249.689,06 478In Stock 1.000Expected 10/09/2027	Mfr. Part No. SCT027H65G3AG Mouser Part No 511-SCT027H65G3AG	STMicroelectronics	SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A in an H2PAK-7 package Learn More about STMicroelectronics stm 650 sic mosfets	Datasheet	478In Stock 1.000Expected 10/09/2027	Cut Tape Rp249.689,06 Rp141.998,04 Rp141.631,12 Reel Rp133.925,80	Min.: 1 Mult.: 1 : 1.000	SMD/SMT	H2PAK-7	1 Channel	650 V	60 A	39.3 mOhms	- 10 V, + 22 V	3 V	48.6 nC	- 55 C	+ 175 C	300 W	Enhancement	AEC-Q101
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A SCT027W65G3-4AG STMicroelectronics 1: Rp259.412,44 187In Stock	Mfr. Part No. SCT027W65G3-4AG Mouser Part No 511-SCT027W65G3-4AG	STMicroelectronics	SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A Learn More about STMicroelectronics stm silicon carbide mosfets	Datasheet	187In Stock	Rp259.412,44 Rp173.736,62 Rp161.077,88 Rp137.044,62	Min.: 1 Mult.: 1	Through Hole	HiP-247-4	1 Channel	650 V	60 A	29 mOhms	- 18 V, + 18 V	4.2 V	51 nC	- 55 C	+ 200 C	313 W	Enhancement	AEC-Q100
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an H2PAK-7 package SCT040H120G3AG STMicroelectronics 1: Rp243.634,88 869In Stock	Mfr. Part No. SCT040H120G3AG Mouser Part No 511-SCT040H120G3AG	STMicroelectronics	SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an H2PAK-7 package Learn More about STMicroelectronics stm automotive grade mosfets	Datasheet	869In Stock	Cut Tape Rp243.634,88 Rp181.441,94 Rp151.354,50 Rp134.843,10 Reel Rp125.853,56	Min.: 1 Mult.: 1 : 1.000	SMD/SMT	H2PAK-7	1 Channel	1.2 kV	40 A	54 mOhms	- 18 V, + 18 V	4.2 V	54 nC	- 55 C	+ 175 C	300 W	Enhancement	AEC-Q101
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A SCT040W120G3-4AG STMicroelectronics 1: Rp256.660,54 647In Stock 600Expected 30/07/2027	Mfr. Part No. SCT040W120G3-4AG Mouser Part No 511-SCT040W120G3-4AG	STMicroelectronics	SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A Learn More about STMicroelectronics stm silicon carbide mosfets	Datasheet	647In Stock 600Expected 30/07/2027	Rp256.660,54 Rp195.568,36 Rp162.912,48 Rp145.300,32 Rp135.576,94	Min.: 1 Mult.: 1	Through Hole	HiP-247-4	1 Channel	1.2 kV	40 A	54 mOhms	- 18 V, + 18 V	4.2 V	56 nC	- 55 C	+ 200 C	312 W	Enhancement	AEC-Q100
SiC MOSFETs Silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package SCT040W65G3-4 STMicroelectronics 1: Rp207.126,34 457In Stock	Mfr. Part No. SCT040W65G3-4 Mouser Part No 511-SCT040W65G3-4	STMicroelectronics	SiC MOSFETs Silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package Learn More about STMicroelectronics stm 650 sic mosfets	Datasheet	457In Stock	Rp207.126,34 Rp113.194,82 Rp103.654,90	Min.: 1 Mult.: 1	Through Hole	HiP247-4	1 Channel	650 V	30 A	63 mOhms	- 10 V, + 22 V	3 V	37.5 nC	- 55 C	+ 200 C	240 W	Enhancement
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package SCT040W65G3-4AG STMicroelectronics 1: Rp243.634,88 429In Stock	Mfr. Part No. SCT040W65G3-4AG Mouser Part No 511-SCT040W65G3-4AG	STMicroelectronics	SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package Learn More about STMicroelectronics stm 650 sic mosfets	Datasheet	429In Stock	Rp243.634,88 Rp181.441,94 Rp151.354,50 Rp134.843,10 Rp125.853,56	Min.: 1 Mult.: 1	Through Hole	HiP247-4	1 Channel	650 V	30 A	63 mOhms	- 10 V, + 22 V	3 V	37.5 nC	- 55 C	+ 200 C	240 W	Enhancement	AEC-Q101
SiC MOSFETs Silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A in a TO-LL package SCT055TO65G3 STMicroelectronics 1: Rp184.377,30 1.394In Stock	Mfr. Part No. SCT055TO65G3 Mouser Part No 511-SCT055TO65G3	STMicroelectronics	SiC MOSFETs Silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A in a TO-LL package Learn More about STMicroelectronics stm 650 sic mosfets	Datasheet	1.394In Stock	Cut Tape Rp184.377,30 Rp125.853,56 Rp103.838,36 Rp92.463,84 Rp86.593,12 Reel Rp86.593,12	Min.: 1 Mult.: 1 : 1.800	SMD/SMT	TOLL-8	1 Channel	650 V	30 A	72 mOhms	- 10 V, + 22 V	3 V	31 nC	- 55 C	+ 175 C	234 W	Enhancement
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HU3PAK package SCT020HU120G3AG STMicroelectronics 1: Rp408.565,42 19In Stock 1.200Expected 29/10/2026	Mfr. Part No. SCT020HU120G3AG Mouser Part No 511-SCT020HU120G3AG	STMicroelectronics	SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HU3PAK package Learn More about STMicroelectronics stm automotive grade mosfets	Datasheet	19In Stock 1.200Expected 29/10/2026	Cut Tape Rp408.565,42 Rp305.093,98 Rp263.998,94 Reel Rp249.872,52 MouseReel Available	Min.: 1 Mult.: 1 : 600	SMD/SMT	HU3PAK-7	1 Channel	1.2 kV	100 A	28 mOhms	- 10 V, + 22 V	3 V	121 nC	- 55 C		555 W	Enhancement	AEC-Q101
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247-4 package SCT025W120G3-4AG STMicroelectronics 1: Rp367.286,92 14In Stock 1.200On Order	Mfr. Part No. SCT025W120G3-4AG Mouser Part No 511-SCT025W120G3-4AG	STMicroelectronics	SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247-4 package Learn More about STMicroelectronics stm automotive grade mosfets	Datasheet	14In Stock 1.200On Order	Rp367.286,92 Rp238.498,00 Rp210.979,00 Rp194.100,68	Min.: 1 Mult.: 1	Through Hole	HiP-247-4	1 Channel	1.2 kV	56 A	37 mOhms	- 18 V, + 18 V	4.2 V	73 nC	- 55 C	+ 200 C	388 W	Enhancement	AEC-Q101
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247 package SCT025W120G3AG STMicroelectronics 1: Rp347.656,70 43In Stock 600On Order	Mfr. Part No. SCT025W120G3AG Mouser Part No 511-SCT025W120G3AG	STMicroelectronics	SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247 package Learn More about STMicroelectronics stm automotive grade mosfets	Datasheet	43In Stock 600On Order	Rp347.656,70 Rp216.299,34 Rp202.906,76	Min.: 1 Mult.: 1	Through Hole	HiP247-3	1 Channel	1.2 kV	56 A	37 mOhms	- 10 V, + 22 V	3 V	73 nC	- 55 C	+ 200 C	388 W	Enhancement	AEC-Q101
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HiP247-4 package SCT070W120G3-4AG STMicroelectronics 1: Rp253.174,80 20In Stock 1.200On Order	Mfr. Part No. SCT070W120G3-4AG Mouser Part No 511-SCT070W120G3-4AG	STMicroelectronics	SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HiP247-4 package Learn More about STMicroelectronics stm sctw70n120g2v 1200v sic power mosfet	Datasheet	20In Stock 1.200On Order	Rp253.174,80 Rp169.150,12 Rp159.059,82 Rp142.731,88 Rp134.109,26	Min.: 1 Mult.: 1	Through Hole	HiP-247-4	1 Channel	1.2 kV	30 A	87 mOhms	- 18 V, + 18 V	4.2 V	41 nC	- 55 C	+ 200 C	236 W	Enhancement	AEC-Q101
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V 40 mOhm typ. 30 A SCT040H65G3AG STMicroelectronics 1: Rp241.433,36 543In Stock 1.000Expected 02/07/2027	Mfr. Part No. SCT040H65G3AG Mouser Part No 511-SCT040H65G3AG	STMicroelectronics	SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V 40 mOhm typ. 30 A Learn More about STMicroelectronics stm 650 sic mosfets	Datasheet	543In Stock 1.000Expected 02/07/2027	Cut Tape Rp241.433,36 Rp179.974,26 Rp149.886,82 Rp133.558,88 Reel Rp124.936,26 MouseReel Available	Min.: 1 Mult.: 1 : 1.000	SMD/SMT		1 Channel	650 V	30 A	40 mOhms	- 10 V, + 22 V	4.2 V	39.5 nC	- 55 C	+ 175 C	221 W	Enhancement	AEC-Q101
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an H2PAK-7 package SCT018H65G3AG STMicroelectronics 1: Rp301.975,16 6In Stock 1.000Expected 03/09/2027	Mfr. Part No. SCT018H65G3AG Mouser Part No 511-SCT018H65G3AG	STMicroelectronics	SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an H2PAK-7 package Learn More about STMicroelectronics stm 650 sic mosfets	Datasheet	6In Stock 1.000Expected 03/09/2027	Cut Tape Rp301.975,16 Rp181.075,02 Reel Rp169.150,12 MouseReel Available	Min.: 1 Mult.: 1 : 1.000	SMD/SMT	H2PAK-7	1 Channel	650 V	55 A	27 mOhms	- 18 V, + 18 V	4.2 V	79.4 nC	- 55 C	+ 175 C	385 W	Enhancement	AEC-Q101
SiC MOSFETs Silicon carbide Power MOSFET 650 V, 40 mOhm typ., 35 A in a TO-LL package SCT040TO65G3 STMicroelectronics 1: Rp205.842,12 8In Stock 1.800Expected 10/06/2027	Mfr. Part No. SCT040TO65G3 Mouser Part No 511-SCT040TO65G3	STMicroelectronics	SiC MOSFETs Silicon carbide Power MOSFET 650 V, 40 mOhm typ., 35 A in a TO-LL package Learn More about STMicroelectronics stm 650 sic mosfets	Datasheet	8In Stock 1.800Expected 10/06/2027	Cut Tape Rp205.842,12 Rp145.483,78 Rp121.083,60 Rp108.057,94 Rp100.903,00 Reel Rp100.903,00	Min.: 1 Mult.: 1 : 1.800	SMD/SMT	TOLL-8	1 Channel	650 V	35 A	63 mOhms	- 10 V, + 22 V	3 V	42.5 nC	- 55 C	+ 175 C	288 W	Enhancement
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247 package SCT040W120G3AG STMicroelectronics 1: Rp256.660,54 14In Stock 600Expected 30/04/2027	Mfr. Part No. SCT040W120G3AG Mouser Part No 511-SCT040W120G3AG	STMicroelectronics	SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247 package Learn More about STMicroelectronics stm automotive grade mosfets	Datasheet	14In Stock 600Expected 30/04/2027	Rp256.660,54 Rp195.568,36 Rp162.912,48 Rp145.300,32 Rp135.576,94	Min.: 1 Mult.: 1	Through Hole	HiP-247-3	1 Channel	1.2 kV	40 A	54 mOhms	- 18 V, + 18 V	4.2 V	56 nC	- 55 C	+ 200 C	312 W	Enhancement	AEC-Q101
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 750 V, 11.4 mOhm typ., 110 A SCT011H75G3AG STMicroelectronics 1: Rp516.623,36 988Expected 09/07/2027 New Product	Mfr. Part No. SCT011H75G3AG Mouser Part No 511-SCT011H75G3AG New Product	STMicroelectronics	SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 750 V, 11.4 mOhm typ., 110 A	Datasheet	988Expected 09/07/2027	Cut Tape Rp516.623,36 Rp413.518,84 Rp357.563,54 Rp338.667,16 Reel Rp316.285,04	Min.: 1 Mult.: 1 : 1.000														AEC-Q100
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 750 V, 11.4 mOhm typ., 110 A in an HU3PAK package SCT011HU75G3AG STMicroelectronics 1: Rp565.607,18 1.200Expected 06/08/2027	Mfr. Part No. SCT011HU75G3AG Mouser Part No 511-SCT011HU75G3AG	STMicroelectronics	SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 750 V, 11.4 mOhm typ., 110 A in an HU3PAK package Learn More about STMicroelectronics stm automotive grade mosfets	Datasheet	1.200Expected 06/08/2027	Cut Tape Rp565.607,18 Rp452.779,28 Rp391.503,64 Reel Rp370.772,66 MouseReel Available	Min.: 1 Mult.: 1 : 600	SMD/SMT	HU3PAK-7	1 Channel	750 V	110 A	15 mOhms	- 10 V, + 22 V	3.2 V	154 nC	- 55 C	+ 175 C	652 W	Enhancement	AEC-Q101
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 16 mOhm typ., 112 A in an H2PAK-7 package SCT016H120G3AG STMicroelectronics 1: Rp494.791,62 1.985On Order	Mfr. Part No. SCT016H120G3AG Mouser Part No 511-SCT016H120G3AG	STMicroelectronics	SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 16 mOhm typ., 112 A in an H2PAK-7 package Learn More about STMicroelectronics stm automotive grade mosfets	Datasheet	1.985On Order	Cut Tape Rp494.791,62 Rp396.090,14 Rp342.519,82 Rp324.357,28 Reel Rp303.075,92 MouseReel Available	Min.: 1 Mult.: 1 : 1.000	SMD/SMT	H2PAK-7	1 Channel	1.2 kV	112 A	22 mOhms	- 10 V, + 22 V	3 V	150 nC	- 55 C	+ 175 C	652 W	Enhancement	AEC-Q101
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 55 A in an H2PAK-7 package SCT025H120G3AG STMicroelectronics 1: Rp336.832,56 1.997Expected 16/04/2027	Mfr. Part No. SCT025H120G3AG Mouser Part No 511-SCT025H120G3AG	STMicroelectronics	SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 55 A in an H2PAK-7 package Learn More about STMicroelectronics stm automotive grade mosfets	Datasheet	1.997Expected 16/04/2027	Cut Tape Rp336.832,56 Rp208.594,02 Rp205.842,12 Reel Rp190.064,56	Min.: 1 Mult.: 1 : 1.000	SMD/SMT	H2PAK-7	1 Channel	1.2 kV	55 A	37 mOhms	- 10 V, + 22 V	3 V	73 nC	- 55 C	+ 175 C	375 W	Enhancement	AEC-Q101
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an H2PAK-7 package SCT012H90G3AG STMicroelectronics 1: Rp423.058,76 998Expected 04/06/2027	Mfr. Part No. SCT012H90G3AG Mouser Part No 511-SCT012H90G3AG	STMicroelectronics	SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an H2PAK-7 package Learn More about STMicroelectronics stm automotive grade mosfets	Datasheet	998Expected 04/06/2027	Cut Tape Rp423.058,76 Rp274.639,62 Rp274.089,24 Rp259.045,52 Reel Rp241.983,74	Min.: 1 Mult.: 1 : 1.000	SMD/SMT	H2PAK-7	1 Channel	900 V	110 A	12 mOhms	- 18 V, + 18 V	4.2 V	138 nC	- 55 C	+ 175 C	625 W	Enhancement	AEC-Q101
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an HiP247-4 package SCT018W65G3-4AG STMicroelectronics 1: Rp342.703,28 600Expected 05/11/2027	Mfr. Part No. SCT018W65G3-4AG Mouser Part No 511-SCT018W65G3-4AG	STMicroelectronics	SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an HiP247-4 package	Datasheet	600Expected 05/11/2027	Rp342.703,28 Rp261.063,58 Rp217.583,56 Rp181.075,02	Min.: 1 Mult.: 1	Through Hole	HiP-247-4	1 Channel	650 V	55 A	27 mOhms	- 18 V, + 18 V	4.2 V	77 nC	- 55 C	+ 200 C	398 W	Enhancement	AEC-Q101