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Qorvo QPD1006 Evaluation Board

Qorvo QPD1006 Evaluation Board is designed to evaluate the QPD1006 450W GaN on SiC HEMT, which operates from 1.2GHz to 1.4GHz. This transistor can support pulsed and continuous wave (CW) operations. The IMFET transistor is ideally suited for military and civilian radar.

Features

  • 1.2GHz to 1.4GHz operating frequency range
  • 313W (CW) and 468W (pulsed) output power (P3dB)
  • 17.5dB (CW) and 17.8dB (pulsed) linear gain
  • 55% (CW) and 62.2% (pulsed) typical DEFF3dB
  • 45V (CW) and 50V (pulsed) operating voltage
  • Low thermal resistance package
  • Pulse capable at 1.3GHz and +25°C

Schematic

Schematic - Qorvo QPD1006 Evaluation Board

Associated Transistor

Qorvo QPD1006 GaN RF IMFET Transistor

Fully matched to 50Ω in an industry standard air cavity package ideal for military/civilian radar.

Learn Moreabout Qorvo QPD1006 GaN RF IMFET Transistor View Productsrelated to Qorvo QPD1006 GaN RF IMFET Transistor
Published: 2020-07-19 | Updated: 2024-08-22