Qorvo QPD1006 GaN RF IMFET Transistor
Qorvo QPD1006 GaN RF Internally Matched FET (IMFET) Transistor is a 450W GaN SiC high-electron mobility transistor (HEMT). The QPD1006 transistor operates from 1.2GHz to 1.4GHz frequency range and a 50V supply rail. This device can support pulsed and continuous wave (CW) operations. Qorvo QPD1006 transistor is GaN IMFET fully matched to 50Ω in an industry-standard air cavity package. This IMFET transistor is ideally suited for military and civilian radar.
Features
- 1.2GHz to 1.4GHz operating frequency range
- 313W (CW) and 468W (pulsed) output power (P3dB)
- 17.5dB (CW) and 17.8dB (pulsed) linear gain
- 55% (CW) and 62.2% (pulsed) typical DEFF3dB
- 45V (CW) and 50V (pulsed) operating voltage
- Low thermal resistance package
- Pulse capable at 1.3GHz and +25°C
Applications
- Military radar
- Civilian radar
Functional Block Diagram
Characteristic Curve
Mechanical Dimensions
Associated Evaluation Board
Qorvo QPD1006 Evaluation Board
Designed to evaluate QPD1006 450W GaN on SiC HEMT that operates from 1.2GHz to 1.4GHz frequency.
Published: 2020-07-17
| Updated: 2024-08-22