GaN FETs

 GaN FETs
GaN FETs are available at Mouser Electronics from industry leading manufacturers. Mouser is an authorized distributor for many GaN FET manufacturers including Infineon, MACOM, Qorvo & more. Please view our selection of GaN FETs below.
Results: 511
Select Image Part # Mfr. Description Datasheet Availability Pricing (IDR) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Mounting Style Package/Case Transistor Polarity Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum Operating Temperature Maximum Operating Temperature Pd - Power Dissipation Channel Mode Tradename
MACOM GaN FETs 270W GaN HEMT 48V 2496 to 2690MHz 53In Stock
Min.: 1
Mult.: 1
Reel: 50

Screw Mount H-87265J-2 N-Channel 125 V 12 A + 225 C
Qorvo GaN FETs 1500W, 65V,GaN pre-matched, 442(+/-5) MH 7In Stock
Min.: 1
Mult.: 1

MACOM GaN FETs 280W GaN HEMT 48V 3400 to 3600MHz
30In Stock
Min.: 1
Mult.: 1
Reel: 50

Screw Mount H-37248C-4 N-Channel 125 V 5.4 A + 225 C
Renesas Electronics GaN FETs 650V, 30mohm GaN FET in TOLL 351In Stock
Min.: 1
Mult.: 1
Reel: 2.000

SMD/SMT TOLL-10 N-Channel 1 Channel 650 V 55.7 A 41 mOhms 4.8 V 24.5 nC - 55C + 150 C 192 W Enhancement SuperGaN
Renesas Electronics GaN FETs 650V, 30mohm GaN FET in TO247-3L 798In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 55.7 A 41 mOhms - 20 V, + 20 V 4.8 V 24.5 nC - 55 C + 150 C 192 W Enhancement SuperGaN
STMicroelectronics GaN FETs 700 V, 53 mOhm typ., 26 A, e-mode PowerGaN transistor 327In Stock
Min.: 1
Mult.: 1
Reel: 1.800

SMD/SMT TO-LL-11 700 V 26 A 70 mOhms - 6 V, + 7 V 2.5 V 8.5 nC - 55 C + 150 C 231 W Enhancement
EPC GaN FETs 100 V eGaN FET, 5.2 mohm Rdson, 2.3 mm x 1.45 mm, Cu pillar CSP 1.750In Stock
Min.: 1
Mult.: 1
Reel: 2.500

SMD/SMT Die N-Channel 1 Channel 100 V 46 A 5.2 mOhms 6 V, - 4 V 2.5 V 7.3 nC - 40 C + 150 C Enhancement eGaN FET
EPC GaN FETs 100 V eGaN FET, 2 mohm Rdson, 3.23 mm x 2.88 mm, Cu pillar CSP 700In Stock
Min.: 1
Mult.: 1
Reel: 1.000

SMD/SMT Die N-Channel 1 Channel 100 V 126 A 2 mOhms 6 V, - 4 V 2.5 V 20 nC - 40 C + 150 C Enhancement eGaN FET
Infineon Technologies GaN FETs CoolGaN Transistor 100 V G3 in PQFN 3x3, 5 mohm 3.840In Stock
Min.: 1
Mult.: 1
Reel: 5.000

SMD/SMT 1 Channel 100 V 38 A 7 mOhms 6.5 V 2.9 V 6.1 nC - 40 C + 150 C 23 W Enhancement CoolGaN
Infineon Technologies GaN FETs CoolGaN Transistor 100 V G3 in PQFN 3x3, 9.4 mohm 3.399In Stock
Min.: 1
Mult.: 1
Reel: 5.000

SMD/SMT 1 Channel 100 V 23 A 11 mOhms 6.5 V 2.9 V 3.4 nC - 40 C + 150 C 15 W Enhancement CoolGaN
Infineon Technologies GaN FETs CoolGaN Transistor 60 V G3 in PQFN 3x5, 1.3 mohm 3.577In Stock
Min.: 1
Mult.: 1
Reel: 5.000

SMD/SMT 1 Channel 60 V 99 A 1.9 mOhms 6.5 V 2.9 V 13 nC - 40 C + 150 C 45 W Enhancement CoolGaN
Infineon Technologies GaN FETs CoolGaN Transistor 80 V G3 in PQFN 3x5, 1.8 mohm 6.355In Stock
Min.: 1
Mult.: 1
Reel: 5.000

SMD/SMT 1 Channel 80 V 86 A 2.5 mOhms 6.5 V 2.9 V 12 nC - 40 C + 150 C 45 W Enhancement CoolGaN
Infineon Technologies GaN FETs CoolGaN Transistor 700 V G5 1.792In Stock
Min.: 1
Mult.: 1
Reel: 2.500

SMD/SMT N-Channel 1 Channel 700 V - 10 V 1.6 V 1.9 nC - 40 C + 150 C 29 W Enhancement CoolGaN
Infineon Technologies GaN FETs Two 140 mohm / 650 V GaN transistors in half-bridge configuration 2.392In Stock
Min.: 1
Mult.: 1
Reel: 3.000

SMD/SMT QFN-32 N-Channel 2 Channel 650 V 170 mOhms 1.6 V 1.8 nC - 55 C + 150 C
Infineon Technologies GaN FETs CoolGaN Transistor 650 V G5 2.022In Stock
Min.: 1
Mult.: 1
Reel: 3.000

SMD/SMT HEMT 1 Channel 650 V 22 A 70 mOhms - 10 V 1.6 V 4.7 nC - 55 C + 150 C 111 W Enhancement CoolGaN
Infineon Technologies GaN FETs CoolGaN Transistor 650 V G5 2.304In Stock
Min.: 1
Mult.: 1
Reel: 3.000

SMD/SMT HEMT 1 Channel 650 V 18 A 100 mOhms - 10 V 1.6 V 25 nC - 55 C + 150 C 81 W Enhancement CoolGaN
Infineon Technologies GaN FETs CoolGaN Transistor 650 V G5 2.388In Stock
Min.: 1
Mult.: 1
Reel: 3.000

SMD/SMT HEMT 1 Channel 650 V 16 A 140 mOhms - 10 V 1.6 V 2.4 nC - 55 C + 150 C 59 W Enhancement CoolGaN
Infineon Technologies GaN FETs CoolGaN Transistor 650 V G5 2.263In Stock
Min.: 1
Mult.: 1
Reel: 3.000

SMD/SMT HEMT 1 Channel 650 V 13 A 170 mOhms - 10 V 1.6 V 1.8 nC - 55 C + 150 C 47 W Enhancement CoolGaN
Infineon Technologies GaN FETs CoolGaN Transistor 700 V G5 4.888In Stock
Min.: 1
Mult.: 1
Reel: 5.000

SMD/SMT PG-TSON-8 HEMT 1 Channel 700 V 13 A 170 mOhms 1.6 V 1.8 nC - 40 C + 150 C 47 W Enhancement CoolGaN
Infineon Technologies GaN FETs CoolGaN Transistor 700 V G5 5.130In Stock
Min.: 1
Mult.: 1
Reel: 5.000

SMD/SMT PG-TSON-8 HEMT 1 Channel 700 V 9.2 A 240 mOhms - 10 V 1.6 V 1.26 nC - 40 C + 150 C 34 W Enhancement CoolGaN
ROHM Semiconductor GaN FETs GaN FETs 650V, 14.5A, 130mO, Pd 91W 2.679In Stock
Min.: 1
Mult.: 1
Reel: 3.500
SMD/SMT DFN8080CK-8 N-Channel 1 Channel 650 V 14.5 A 182 mOhms - 10 V, + 6.5 V 2.5 V 2.8 nC - 55 C + 150 C 91 W Enhancement
Nexperia GaN FETs GANE140-700BBA/SOT428/DPAK 1.976In Stock
Min.: 1
Mult.: 1
Reel: 2.500

SMD/SMT TO-252-3 P-Channel 1 Channel 700 V 17 A 140 mOhms 7 V 2.5 V 3.5 nC - 55 C + 150 C 110 W Enhancement
Nexperia GaN FETs GANE350-650FBA/SOT8075/DFN5060 1.945In Stock
Min.: 1
Mult.: 1
Reel: 2.500

SMD/SMT DFN-5 P-Channel 1 Channel 650 V 6 A 350 mOhms 7 V 2.5 V 1.5 nC - 55 C + 150 C 65 W Enhancement
Nexperia GaN FETs GANE350-700BBA/SOT428/DPAK 1.904In Stock
Min.: 1
Mult.: 1
Reel: 2.500

SMD/SMT TO-252-3 P-Channel 1 Channel 700 V 6 A 350 mOhms 7 V 2.5 V 1.5 nC - 55 C + 150 C 47 W Enhancement
Renesas Electronics GaN FETs 650V, 30mohm GaN FET in TOLT 1.428In Stock
Min.: 1
Mult.: 1
Reel: 1.300

SMD/SMT TOLT-16 N-Channel 1 Channel 650 V 55.7 A 41 mOhms - 20 V, + 20 V 4.8 V 24.5 nC - 55 C + 150 C 192 W Enhancement SuperGaN