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SiC MOSFETs

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Results: 59

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Part #

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 19.2 mOhm typ., 90 A

SCT019HU120G3AG
STMicroelectronics
1: Rp405.814
12In Stock
600Expected 02/04/2027
New Product

Mfr. Part No.
SCT019HU120G3AG

Mouser Part No
511-SCT019HU120G3AG

New Product

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 19.2 mOhm typ., 90 A

Learn More

Datasheet

12In Stock

600Expected 02/04/2027

Cut Tape

Rp405.814

Rp303.076

Rp232.811

Reel

Rp231.710

Min.: 1
Mult.: 1

: 600

AEC-Q100

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mOhm typ., 33 A in an H

SCTW40N120G2VAG
STMicroelectronics
1: Rp337.750
551In Stock

Mfr. Part No.
SCTW40N120G2VAG

Mouser Part No
511-SCTW40N120G2VAG

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mOhm typ., 33 A in an H

Learn More

Datasheet

551In Stock

Rp337.750

Rp209.511

Rp195.568

Min.: 1
Mult.: 1

Through Hole

HiP-247-3

N-Channel

1 Channel

1.2 kV

36 A

100 mOhms

- 10 V, + 22 V

4.9 V

61 nC

- 55 C

+ 200 C

278 W

Enhancement

AEC-Q101

SiC MOSFETs Silicon carbide Power MOSFET 650 V, 18 mOhm typ., 40 A in a PowerFLAT 8x8 HV pac

SCTL90N65G2V
STMicroelectronics
1: Rp572.395
1.597In Stock

Mfr. Part No.
SCTL90N65G2V

Mouser Part No
511-SCTL90N65G2V

STMicroelectronics

SiC MOSFETs Silicon carbide Power MOSFET 650 V, 18 mOhm typ., 40 A in a PowerFLAT 8x8 HV pac

Learn More

Datasheet

1.597In Stock

Cut Tape

Rp572.395

Rp418.472

Rp408.932

Rp408.015

Rp382.514

Reel

Rp382.147

MouseReel Available

Min.: 1
Mult.: 1

: 3.000

SMD/SMT

PowerFLAT-5

N-Channel

1 Channel

650 V

40 A

18 mOhms

- 10 V, + 22 V

5 V

157 nC

- 55 C

+ 175 C

935 W

Enhancement

SiC MOSFETs Silicon carbide Power MOSFET 650 V, 55 mOhm typ., 40 A in a PowerFLAT 8x8 HV pac

SCTL35N65G2V
STMicroelectronics
1: Rp314.634
2.311In Stock

Mfr. Part No.
SCTL35N65G2V

Mouser Part No
511-SCTL35N65G2V

STMicroelectronics

SiC MOSFETs Silicon carbide Power MOSFET 650 V, 55 mOhm typ., 40 A in a PowerFLAT 8x8 HV pac

Learn More

Datasheet

2.311In Stock

Cut Tape

Rp314.634

Rp222.354

Rp190.798

Rp190.615

Rp178.323

Reel

Rp178.323

MouseReel Available

Min.: 1
Mult.: 1

: 3.000

SMD/SMT

PowerFLAT-5

N-Channel

1 Channel

650 V

40 A

67 mOhms

- 10 V, + 22 V

5 V

73 nC

- 55 C

+ 175 C

417 W

Enhancement

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an HiP247-4 package

SCT012W90G3-4AG
STMicroelectronics
1: Rp407.281
632In Stock
New Product

Mfr. Part No.
SCT012W90G3-4AG

Mouser Part No
511-SCT012W90G3-4AG

New Product

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an HiP247-4 package

Learn More

Datasheet

632In Stock

Rp407.281

Rp256.661

Quote

Min.: 1
Mult.: 1

Through Hole

HiP247-3

N-Channel

1 Channel

900 V

110 A

15.8 mOhms

- 10 V, + 22 V

3.1 V

138 nC

- 55 C

+ 200 C

625 W

Enhancement

AEC-Q101

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 16 mOhm typ., 112 A in an H2PAK-7 package

SCT016H120G3AG
STMicroelectronics
1: Rp458.100
491In Stock
New Product

Mfr. Part No.
SCT016H120G3AG

Mouser Part No
511-SCT016H120G3AG

New Product

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 16 mOhm typ., 112 A in an H2PAK-7 package

Learn More

Datasheet

491In Stock

Cut Tape

Rp458.100

Rp331.145

Rp326.192

Rp315.001

Reel

Rp288.583

MouseReel Available

Min.: 1
Mult.: 1

: 1.000

SMD/SMT

H2PAK-7

N-Channel

1 Channel

1.2 kV

112 A

22 mOhms

- 10 V, + 22 V

3 V

150 nC

- 55 C

+ 175 C

652 W

Enhancement

AEC-Q101

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HU3PAK package

SCT020HU120G3AG
STMicroelectronics
1: Rp417.555
254In Stock
600Expected 25/09/2026
New Product

Mfr. Part No.
SCT020HU120G3AG

Mouser Part No
511-SCT020HU120G3AG

New Product

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HU3PAK package

Learn More

Datasheet

254In Stock

600Expected 25/09/2026

Cut Tape

Rp417.555

Rp311.882

Rp269.686

Reel

Rp238.681

MouseReel Available

Min.: 1
Mult.: 1

: 600

SMD/SMT

HU3PAK-7

N-Channel

1 Channel

1.2 kV

100 A

28 mOhms

- 10 V, + 22 V

3 V

121 nC

- 55 C

555 W

Enhancement

AEC-Q101

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A in an H2PAK-7 package

SCT027H65G3AG
STMicroelectronics
1: Rp249.689
943In Stock
New Product

Mfr. Part No.
SCT027H65G3AG

Mouser Part No
511-SCT027H65G3AG

New Product

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A in an H2PAK-7 package

Learn More

Datasheet

943In Stock

Cut Tape

Rp249.689

Rp174.287

Rp141.631

Reel

Rp132.275

Min.: 1
Mult.: 1

: 1.000

SMD/SMT

H2PAK-7

N-Channel

1 Channel

650 V

60 A

39.3 mOhms

- 10 V, + 22 V

3 V

48.6 nC

- 55 C

+ 175 C

300 W

Enhancement

AEC-Q101

SiC MOSFETs Silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A in a TO-LL package

SCT055TO65G3
STMicroelectronics
1: Rp167.866
1.754In Stock
New Product

Mfr. Part No.
SCT055TO65G3

Mouser Part No
511-SCT055TO65G3

New Product

STMicroelectronics

SiC MOSFETs Silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A in a TO-LL package

Learn More

Datasheet

1.754In Stock

Cut Tape

Rp167.866

Rp114.663

Rp94.665

Rp86.043

Rp78.704

Reel

Rp78.704

Min.: 1
Mult.: 1

: 1.800

SMD/SMT

TOLL-8

N-Channel

1 Channel

650 V

30 A

72 mOhms

- 10 V, + 22 V

3 V

31 nC

- 55 C

+ 175 C

234 W

Enhancement

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an HiP247-4 package

SCT018W65G3-4AG
STMicroelectronics
1: Rp352.610
465In Stock

Mfr. Part No.
SCT018W65G3-4AG

Mouser Part No
511-SCT018W65G3-4AG

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an HiP247-4 package

Learn More

Datasheet

465In Stock

Rp352.610

Rp259.779

Rp198.687

Rp172.636

Min.: 1
Mult.: 1

Through Hole

HiP-247-4

N-Channel

1 Channel

650 V

55 A

27 mOhms

- 18 V, + 18 V

4.2 V

77 nC

- 55 C

+ 200 C

398 W

Enhancement

AEC-Q101

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HiP247-4 package

SCT020W120G3-4AG
STMicroelectronics
1: Rp371.140
362In Stock

Mfr. Part No.
SCT020W120G3-4AG

Mouser Part No
511-SCT020W120G3-4AG

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HiP247-4 package

Learn More

Datasheet

362In Stock

Rp371.140

Rp232.077

Rp220.702

Min.: 1
Mult.: 1

Through Hole

Hip247-4

N-Channel

1 Channel

1.2 kV

100 A

28 mOhms

- 10 V, + 22 V

3 V

121 nC

- 55 C

+ 200 C

541 W

Enhancement

AEC-Q101

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247-4 package

SCT025W120G3-4AG
STMicroelectronics
1: Rp373.525
305In Stock
1.200Expected 31/08/2026

Mfr. Part No.
SCT025W120G3-4AG

Mouser Part No
511-SCT025W120G3-4AG

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247-4 package

Learn More

Datasheet

305In Stock

1.200Expected 31/08/2026

Rp373.525

Rp267.118

Rp230.242

Rp204.374

Min.: 1
Mult.: 1

Through Hole

HiP-247-4

N-Channel

1 Channel

1.2 kV

56 A

37 mOhms

- 18 V, + 18 V

4.2 V

73 nC

- 55 C

+ 200 C

388 W

Enhancement

AEC-Q101

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247 package

SCT025W120G3AG
STMicroelectronics
1: Rp347.657
424In Stock

Mfr. Part No.
SCT025W120G3AG

Mouser Part No
511-SCT025W120G3AG

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247 package

Learn More

Datasheet

424In Stock

Rp347.657

Rp216.299

Rp202.907

Min.: 1
Mult.: 1

Through Hole

HiP247-3

N-Channel

1 Channel

1.2 kV

56 A

37 mOhms

- 10 V, + 22 V

3 V

73 nC

- 55 C

+ 200 C

388 W

Enhancement

AEC-Q101

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A

SCT027W65G3-4AG
STMicroelectronics
1: Rp285.280
261In Stock

Mfr. Part No.
SCT027W65G3-4AG

Mouser Part No
511-SCT027W65G3-4AG

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A

Learn More

Datasheet

261In Stock

Rp285.280

Rp212.997

Rp161.078

Rp135.393

Min.: 1
Mult.: 1

Through Hole

HiP-247-4

N-Channel

1 Channel

650 V

60 A

29 mOhms

- 18 V, + 18 V

4.2 V

51 nC

- 55 C

+ 200 C

313 W

Enhancement

AEC-Q100

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A

SCT040W120G3-4AG
STMicroelectronics
1: Rp258.128
377In Stock

Mfr. Part No.
SCT040W120G3-4AG

Mouser Part No
511-SCT040W120G3-4AG

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A

Learn More

Datasheet

377In Stock

Rp258.128

Rp180.525

Rp137.962

Min.: 1
Mult.: 1

Through Hole

HiP-247-4

N-Channel

1 Channel

1.2 kV

40 A

54 mOhms

- 18 V, + 18 V

4.2 V

56 nC

- 55 C

+ 200 C

312 W

Enhancement

AEC-Q100

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247 package

SCT040W120G3AG
STMicroelectronics
1: Rp254.826
505In Stock

Mfr. Part No.
SCT040W120G3AG

Mouser Part No
511-SCT040W120G3AG

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247 package

Learn More

Datasheet

505In Stock

Rp254.826

Rp179.057

Rp136.678

Min.: 1
Mult.: 1

Through Hole

HiP-247-3

N-Channel

1 Channel

1.2 kV

40 A

54 mOhms

- 18 V, + 18 V

4.2 V

56 nC

- 55 C

+ 200 C

312 W

Enhancement

AEC-Q101

SiC MOSFETs Silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package

SCT040W65G3-4
STMicroelectronics
1: Rp211.896
527In Stock

Mfr. Part No.
SCT040W65G3-4

Mouser Part No
511-SCT040W65G3-4

STMicroelectronics

SiC MOSFETs Silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package

Learn More

Datasheet

527In Stock

Rp211.896

Rp127.138

Rp113.378

Rp107.691

Min.: 1
Mult.: 1

Through Hole

HiP247-4

N-Channel

1 Channel

650 V

30 A

63 mOhms

- 10 V, + 22 V

3 V

37.5 nC

- 55 C

+ 200 C

240 W

Enhancement

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package

SCT040W65G3-4AG
STMicroelectronics
1: Rp246.203
481In Stock

Mfr. Part No.
SCT040W65G3-4AG

Mouser Part No
511-SCT040W65G3-4AG

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package

Learn More

Datasheet

481In Stock

Rp246.203

Rp178.507

Rp152.639

Rp129.890

Min.: 1
Mult.: 1

Through Hole

HiP247-4

N-Channel

1 Channel

650 V

30 A

63 mOhms

- 10 V, + 22 V

3 V

37.5 nC

- 55 C

+ 200 C

240 W

Enhancement

AEC-Q101

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A

SCT055HU65G3AG
STMicroelectronics
1: Rp248.221
1.080In Stock

Mfr. Part No.
SCT055HU65G3AG

Mouser Part No
511-SCT055HU65G3AG

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A

Learn More

Datasheet

1.080In Stock

Cut Tape

Rp248.221

Rp189.147

Rp157.592

Reel

Rp137.595

Rp131.174

MouseReel Available

Min.: 1
Mult.: 1

: 600

SMD/SMT

HU3PAK-7

N-Channel

1 Channel

650 V

30 A

72 mOhms

- 10 V, + 22 V

4.2 V

29 nC

- 55 C

+ 175 C

185 W

Enhancement

AEC-Q101

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HiP247-4 package

SCT070W120G3-4AG
STMicroelectronics
1: Rp248.038
301In Stock
1.200Expected 10/08/2026

Mfr. Part No.
SCT070W120G3-4AG

Mouser Part No
511-SCT070W120G3-4AG

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HiP247-4 package

Learn More

Datasheet

301In Stock

1.200Expected 10/08/2026

Rp248.038

Rp199.788

Rp156.858

Rp131.174

Min.: 1
Mult.: 1

Through Hole

HiP-247-4

N-Channel

1 Channel

1.2 kV

30 A

87 mOhms

- 18 V, + 18 V

4.2 V

41 nC

- 55 C

+ 200 C

236 W

Enhancement

AEC-Q101

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an H2PAK-7 package

SCT012H90G3AG
STMicroelectronics
1: Rp403.795
49In Stock
1.000Expected 17/08/2026

Mfr. Part No.
SCT012H90G3AG

Mouser Part No
511-SCT012H90G3AG

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an H2PAK-7 package

Learn More

Datasheet

49In Stock

1.000Expected 17/08/2026

Cut Tape

Rp403.795

Rp289.683

Rp263.082

Rp262.898

Reel

Rp245.836

Min.: 1
Mult.: 1

: 1.000

SMD/SMT

H2PAK-7

N-Channel

1 Channel

900 V

110 A

12 mOhms

- 18 V, + 18 V

4.2 V

138 nC

- 55 C

+ 175 C

625 W

Enhancement

AEC-Q101

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an H2PAK-7 package

SCT018H65G3AG
STMicroelectronics
1: Rp303.993
72In Stock

Mfr. Part No.
SCT018H65G3AG

Mouser Part No
511-SCT018H65G3AG

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an H2PAK-7 package

Learn More

Datasheet

72In Stock

Cut Tape

Rp303.993

Rp214.465

Rp204.925

Rp182.726

Reel

Rp170.618

MouseReel Available

Min.: 1
Mult.: 1

: 1.000

SMD/SMT

H2PAK-7

N-Channel

1 Channel

650 V

55 A

27 mOhms

- 18 V, + 18 V

4.2 V

79.4 nC

- 55 C

+ 175 C

385 W

Enhancement

AEC-Q101

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 40 mOhm typ., 30 A

SCT040HU65G3AG
STMicroelectronics
1: Rp250.056
115In Stock

Mfr. Part No.
SCT040HU65G3AG

Mouser Part No
511-SCT040HU65G3AG

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 40 mOhm typ., 30 A

Learn More

Datasheet

115In Stock

Cut Tape

Rp250.056

Rp174.470

Rp141.815

Reel

Rp132.458

MouseReel Available

Min.: 1
Mult.: 1

: 600

SMD/SMT

H2PAK-2

N-Channel

1 Channel

650 V

7 A

40 mOhms

- 30 V, + 30 V

5 V

36 nC

- 55 C

+ 150 C

266 W

Enhancement

AEC-Q101

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an H2PAK-7 package

SCT070H120G3AG
STMicroelectronics
1: Rp239.966
76In Stock

Mfr. Part No.
SCT070H120G3AG

Mouser Part No
511-SCT070H120G3AG

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an H2PAK-7 package

Learn More

Datasheet

76In Stock

Cut Tape

Rp239.966

Rp167.132

Rp134.476

Reel

Rp125.670

Min.: 1
Mult.: 1

: 1.000

SMD/SMT

H2PAK-7

N-Channel

1 Channel

1.2 kV

30 A

87 mOhms

- 18 V, + 18 V

4.2 V

37 nC

- 55 C

+ 175 C

223 W

Enhancement

AEC-Q101

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V 40 mOhm typ. 30 A

SCT040H65G3AG
STMicroelectronics
1: Rp222.170
867In Stock

Mfr. Part No.
SCT040H65G3AG

Mouser Part No
511-SCT040H65G3AG

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V 40 mOhm typ. 30 A

Learn More

Datasheet

867In Stock

Cut Tape

Rp222.170

Rp154.106

Rp121.634

Reel

Rp113.562

MouseReel Available

Min.: 1
Mult.: 1

: 1.000

SMD/SMT

N-Channel

1 Channel

650 V

30 A

40 mOhms

- 10 V, + 22 V

4.2 V

39.5 nC

- 55 C

+ 175 C

221 W

Enhancement

AEC-Q101

SiC MOSFETs

Customer Service Office

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Resources

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10.5 nC
10.5 mOhms
12 mOhms
15 mOhms
15.8 mOhms
18 mOhms
22 mOhms
26 mOhms
27 mOhms
28 mOhms
29 mOhms
37 mOhms
39.3 mOhms
40 mOhms
54 mOhms
63 mOhms
67 mOhms
72 mOhms
87 mOhms
100 mOhms

14 nC
22 nC
29 nC
31 nC
32 nC
36 nC
37 nC
37.5 nC
39.5 nC
41 nC
42.5 nC
45 nC
48.6 nC
51 nC
54 nC
56 nC
61 nC
73 nC
76 nC
77 nC

120 W
150 W
175 W
185 W
210 W
221 W
223 W
234 W
236 W
240 W
266 W
278 W
288 W
300 W
312 W
313 W
375 W
385 W
388 W
398 W