|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A
- SCT055W65G3-4AG
- STMicroelectronics
-
1:
Rp229.692
-
57In Stock
|
Mouser Part No
511-SCT055W65G3-4AG
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A
|
|
57In Stock
|
|
|
Rp229.692
|
|
|
Rp186.946
|
|
|
Rp155.758
|
|
|
Rp113.378
|
|
|
Quote
|
|
|
Quote
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
HiP-247-4
|
N-Channel
|
1 Channel
|
650 V
|
30 A
|
72 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
32 nC
|
- 55 C
|
+ 200 C
|
210 W
|
Enhancement
|
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an H2PAK-7 package
- SCT070H120G3AG
- STMicroelectronics
-
1:
Rp223.271
-
85In Stock
|
Mouser Part No
511-SCT070H120G3AG
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an H2PAK-7 package
|
|
85In Stock
|
|
|
Rp223.271
|
|
|
Rp156.308
|
|
|
Rp134.476
|
|
|
Rp134.293
|
|
|
Rp109.709
|
|
Min.: 1
Mult.: 1
|
|
|
SMD/SMT
|
H2PAK-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
30 A
|
87 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
37 nC
|
- 55 C
|
+ 175 C
|
223 W
|
Enhancement
|
AEC-Q101
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HU3PAK package
- SCT070HU120G3AG
- STMicroelectronics
-
1:
Rp250.423
-
73In Stock
-
1.200Expected 16/03/2026
|
Mouser Part No
511-SCT070HU120G3AG
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HU3PAK package
|
|
73In Stock
1.200Expected 16/03/2026
|
|
|
Rp250.423
|
|
|
Rp175.388
|
|
|
Rp155.207
|
|
|
Rp126.587
|
|
Min.: 1
Mult.: 1
|
|
|
SMD/SMT
|
HU3PAK-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
30 A
|
87 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
37 nC
|
- 55 C
|
+ 175 C
|
223 W
|
Enhancement
|
AEC-Q101
|
|
|
|
SiC MOSFETs Silicon carbide Power MOSFET 1700 V, 1.0 Ohm typ., 7 A in an HiP247 package
- SCT1000N170
- STMicroelectronics
-
1:
Rp162.912
-
592In Stock
|
Mouser Part No
511-SCT1000N170
|
STMicroelectronics
|
SiC MOSFETs Silicon carbide Power MOSFET 1700 V, 1.0 Ohm typ., 7 A in an HiP247 package
|
|
592In Stock
|
|
|
Rp162.912
|
|
|
Rp111.544
|
|
|
Rp82.374
|
|
|
Rp72.283
|
|
|
Rp72.100
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
HiP-247-3
|
N-Channel
|
1 Channel
|
1.7 kV
|
6 A
|
1 Ohms
|
- 10 V, + 25 V
|
2.1 V
|
14 nC
|
- 55 C
|
+ 200 C
|
120 W
|
Enhancement
|
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 169 mOhm typ., 20 A in an
- SCT20N120AG
- STMicroelectronics
-
1:
Rp291.701
-
510In Stock
|
Mouser Part No
511-SCT20N120AG
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 169 mOhm typ., 20 A in an
|
|
510In Stock
|
|
|
Rp291.701
|
|
|
Rp215.199
|
|
|
Rp149.887
|
|
|
View
|
|
|
Quote
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
|
N-Channel
|
1 Channel
|
1.2 kV
|
20 A
|
239 mOhms
|
- 20 V, + 20 V
|
3.5 V
|
45 nC
|
- 55 C
|
+ 200 C
|
175 W
|
Enhancement
|
AEC-Q101
|
|
|
|
SiC MOSFETs Silicon carbide Power MOSFET 650 V, 18 mOhm typ., 40 A in a PowerFLAT 8x8 HV pac
- SCTL90N65G2V
- STMicroelectronics
-
1:
Rp534.969
-
1.597In Stock
|
Mouser Part No
511-SCTL90N65G2V
|
STMicroelectronics
|
SiC MOSFETs Silicon carbide Power MOSFET 650 V, 18 mOhm typ., 40 A in a PowerFLAT 8x8 HV pac
|
|
1.597In Stock
|
|
|
Rp534.969
|
|
|
Rp409.299
|
|
|
Rp334.264
|
|
Min.: 1
Mult.: 1
|
|
|
SMD/SMT
|
PowerFLAT-5
|
N-Channel
|
1 Channel
|
650 V
|
40 A
|
18 mOhms
|
- 10 V, + 22 V
|
5 V
|
157 nC
|
- 55 C
|
+ 175 C
|
935 W
|
Enhancement
|
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mOhm typ., 33 A in an H
- SCTW40N120G2VAG
- STMicroelectronics
-
1:
Rp315.551
-
593In Stock
|
Mouser Part No
511-SCTW40N120G2VAG
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mOhm typ., 33 A in an H
|
|
593In Stock
|
|
|
Rp315.551
|
|
|
Rp195.752
|
|
|
Rp170.985
|
|
|
Rp170.801
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
HiP-247-3
|
N-Channel
|
1 Channel
|
1.2 kV
|
36 A
|
100 mOhms
|
- 10 V, + 22 V
|
4.9 V
|
61 nC
|
- 55 C
|
+ 200 C
|
278 W
|
Enhancement
|
AEC-Q101
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 100 A in an H
- SCTW100N65G2AG
- STMicroelectronics
-
1:
Rp470.208
-
317In Stock
-
NRND
|
Mouser Part No
511-SCTW100N65G2AG
NRND
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 100 A in an H
|
|
317In Stock
|
|
|
Rp470.208
|
|
|
Rp417.188
|
|
|
Rp412.785
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
HiP-247-3
|
N-Channel
|
1 Channel
|
650 V
|
100 A
|
69 mOhms
|
- 10 V, + 22 V
|
5 V
|
162 nC
|
- 55 C
|
+ 200 C
|
420 W
|
Enhancement
|
AEC-Q101
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mOhm typ., 33 A in an HiP247-4 package
- SCTWA40N12G24AG
- STMicroelectronics
-
1:
Rp322.156
-
90In Stock
|
Mouser Part No
511-SCTWA40N12G24AG
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mOhm typ., 33 A in an HiP247-4 package
|
|
90In Stock
|
|
|
Rp322.156
|
|
|
Rp228.958
|
|
|
Rp176.489
|
|
|
Rp175.388
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
HiP247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
33 A
|
105 mOhms
|
- 18 V, + 18 V
|
5 V
|
63 nC
|
- 55 C
|
+ 200 C
|
290 W
|
Enhancement
|
AEC-Q101
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 55 A in an H2PAK-7 package
- SCT025H120G3AG
- STMicroelectronics
-
1:
Rp314.817
-
9In Stock
-
2.000Expected 12/10/2026
-
New Product
|
Mouser Part No
511-SCT025H120G3AG
New Product
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 55 A in an H2PAK-7 package
|
|
9In Stock
2.000Expected 12/10/2026
|
|
|
Rp314.817
|
|
|
Rp223.454
|
|
|
Rp208.594
|
|
|
Rp170.251
|
|
Min.: 1
Mult.: 1
|
|
|
SMD/SMT
|
H2PAK-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
55 A
|
37 mOhms
|
- 10 V, + 22 V
|
3 V
|
73 nC
|
- 55 C
|
+ 175 C
|
375 W
|
Enhancement
|
AEC-Q101
|
|
|
|
SiC MOSFETs Silicon carbide Power MOSFET 650 V, 18 mOhm typ., 119 A in an HiP247-4 package
- SCTWA90N65G2V-4
- STMicroelectronics
-
1:
Rp530.016
-
151In Stock
|
Mouser Part No
511-SCTWA90N65G2V-4
|
STMicroelectronics
|
SiC MOSFETs Silicon carbide Power MOSFET 650 V, 18 mOhm typ., 119 A in an HiP247-4 package
|
|
151In Stock
|
|
|
Rp530.016
|
|
|
Rp403.979
|
|
|
Rp372.974
|
|
|
Rp322.156
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
HiP-247-4
|
N-Channel
|
1 Channel
|
650 V
|
119 A
|
24 mOhms
|
- 10 V, + 22 V
|
5 V
|
157 nC
|
- 55 C
|
+ 200 C
|
565 W
|
Enhancement
|
|
|
|
|
SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 21 mOhm typ., 91 A in an HiP247-4 package
- SCTWA70N120G2V-4
- STMicroelectronics
-
1:
Rp541.390
-
28In Stock
|
Mouser Part No
511-SCTWA70N120G2V-4
|
STMicroelectronics
|
SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 21 mOhm typ., 91 A in an HiP247-4 package
|
|
28In Stock
|
|
|
Rp541.390
|
|
|
Rp388.018
|
|
|
Rp379.762
|
|
|
View
|
|
|
Quote
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
HIP247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
91 A
|
30 mOhms
|
- 10 V, + 22 V
|
2.45 V
|
150 nC
|
- 55 C
|
+ 200 C
|
547 W
|
Enhancement
|
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 15 mOhm typ., 129 A in an HiP247-4 package
- SCT015W120G3-4AG
- STMicroelectronics
-
1:
Rp444.524
-
600Expected 26/10/2026
|
Mouser Part No
511-SCT015W120G3-4AG
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 15 mOhm typ., 129 A in an HiP247-4 package
|
|
600Expected 26/10/2026
|
|
|
Rp444.524
|
|
|
Rp363.801
|
|
|
Rp321.238
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
HiP-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
129 A
|
15 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
167 nC
|
- 55 C
|
+ 200 C
|
673 W
|
Enhancement
|
AEC-Q101
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247-4 package
- SCT025W120G3-4AG
- STMicroelectronics
-
1:
Rp333.347
-
1.200On Order
|
Mouser Part No
511-SCT025W120G3-4AG
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247-4 package
|
|
1.200On Order
On Order:
600 Expected 01/05/2026
600 Expected 10/08/2026
Factory Lead Time:
17 Weeks
|
|
|
Rp333.347
|
|
|
Rp266.934
|
|
|
Rp230.793
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
HiP-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
56 A
|
37 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
73 nC
|
- 55 C
|
+ 200 C
|
388 W
|
Enhancement
|
AEC-Q101
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A
- SCT027HU65G3AG
- STMicroelectronics
-
1:
Rp247.854
-
400Expected 04/01/2027
-
New Product
|
Mouser Part No
511-SCT027HU65G3AG
New Product
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A
|
|
400Expected 04/01/2027
|
|
|
Rp247.854
|
|
|
Rp184.928
|
|
|
Rp159.977
|
|
|
Rp151.538
|
|
|
Rp128.605
|
|
Min.: 1
Mult.: 1
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an H2PAK-7 package
- SCT040H120G3AG
- STMicroelectronics
-
1:
Rp232.627
-
996Expected 22/04/2026
|
Mouser Part No
511-SCT040H120G3AG
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an H2PAK-7 package
|
|
996Expected 22/04/2026
|
|
|
Rp232.627
|
|
|
Rp163.096
|
|
|
Rp141.815
|
|
|
Rp141.631
|
|
|
Rp115.763
|
|
Min.: 1
Mult.: 1
|
|
|
SMD/SMT
|
H2PAK-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
40 A
|
54 mOhms
|
- 18 V, + 18 V
|
4.2 V
|
54 nC
|
- 55 C
|
+ 175 C
|
300 W
|
Enhancement
|
AEC-Q101
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A
- SCT055HU65G3AG
- STMicroelectronics
-
1:
Rp229.508
-
1.113Expected 18/03/2026
|
Mouser Part No
511-SCT055HU65G3AG
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A
|
|
1.113Expected 18/03/2026
|
|
|
Rp229.508
|
|
|
Rp161.812
|
|
|
Rp140.347
|
|
|
Rp114.663
|
|
Min.: 1
Mult.: 1
|
|
|
SMD/SMT
|
HU3PAK-7
|
N-Channel
|
1 Channel
|
650 V
|
30 A
|
72 mOhms
|
- 10 V, + 22 V
|
4.2 V
|
29 nC
|
- 55 C
|
+ 175 C
|
185 W
|
Enhancement
|
AEC-Q101
|
|
|
|
SiC MOSFETs Automotive-grade Silicon carbide Power MOSFET 1200 V, 500 mOhm typ., 12 A in an
- SCT10N120AG
- STMicroelectronics
-
1:
Rp168.416
-
844Expected 23/11/2026
|
Mouser Part No
511-SCT10N120AG
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade Silicon carbide Power MOSFET 1200 V, 500 mOhm typ., 12 A in an
|
|
844Expected 23/11/2026
|
|
|
Rp168.416
|
|
|
Rp95.399
|
|
|
Rp75.769
|
|
|
Rp75.586
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
|
N-Channel
|
1 Channel
|
1.2 kV
|
12 A
|
500 mOhms
|
- 10 V, + 25 V
|
3.5 V
|
22 nC
|
- 55 C
|
+ 200 C
|
150 W
|
Enhancement
|
AEC-Q101
|
|
|
|
SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 55 A in an H2PAK-7 package
- SCT025H120G3-7
- STMicroelectronics
-
1:
Rp307.846
-
100On Order
-
New Product
|
Mouser Part No
511-SCT025H120G3-7
New Product
|
STMicroelectronics
|
SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 55 A in an H2PAK-7 package
|
|
100On Order
|
|
|
Rp307.846
|
|
|
Rp238.131
|
|
|
Rp205.842
|
|
|
Rp205.842
|
|
Min.: 1
Mult.: 1
|
|
|
SMD/SMT
|
H2PAK-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
55 A
|
37 mOhms
|
- 10 V, + 22 V
|
3 V
|
73 nC
|
- 55 C
|
+ 175 C
|
375 W
|
Enhancement
|
AEC-Q101
|
|
|
|
SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247-4 package
- SCT040W120G3-4
- STMicroelectronics
-
1:
Rp208.777
-
100On Order
-
New Product
|
Mouser Part No
511-SCT040W120G3-4
New Product
|
STMicroelectronics
|
SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247-4 package
|
|
100On Order
|
|
|
Rp208.777
|
|
|
Rp170.067
|
|
|
Rp141.631
|
|
|
Rp126.220
|
|
|
Rp107.141
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
HiP247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
40 A
|
54 mOhms
|
- 10 V, + 22 V
|
3.1 V
|
56 nC
|
- 55 C
|
+ 200 C
|
312 W
|
Enhancement
|
AEC-Q101
|
|
|
|
SiC MOSFETs Silicon carbide Power MOSFET 650 V, 119 A, 18 mOhm (typ. TJ = 25 C) in an HiP247
- SCTWA90N65G2V
- STMicroelectronics
-
1:
Rp517.908
-
69Expected 16/03/2026
|
Mouser Part No
511-SCTWA90N65G2V
|
STMicroelectronics
|
SiC MOSFETs Silicon carbide Power MOSFET 650 V, 119 A, 18 mOhm (typ. TJ = 25 C) in an HiP247
|
|
69Expected 16/03/2026
|
|
|
Rp517.908
|
|
|
Rp335.548
|
|
|
Rp321.055
|
|
|
Quote
|
|
|
Quote
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
HiP-247-3
|
N-Channel
|
1 Channel
|
650 V
|
119 A
|
24 mOhms
|
- 10 V, + 22 V
|
5 V
|
157 nC
|
- 55 C
|
+ 200 C
|
565 W
|
Enhancement
|
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 750 V, 11.4 mOhm typ., 110 A
- SCT011H75G3AG
- STMicroelectronics
-
1:
Rp425.994
-
Non-Stocked Lead-Time 16 Weeks
-
New Product
|
Mouser Part No
511-SCT011H75G3AG
New Product
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 750 V, 11.4 mOhm typ., 110 A
|
|
Non-Stocked Lead-Time 16 Weeks
|
|
|
Rp425.994
|
|
|
Rp355.179
|
|
|
Rp354.995
|
|
|
Rp297.205
|
|
|
View
|
|
|
Quote
|
|
Min.: 1
Mult.: 1
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 13.5 mOhm typ., 110 A
- SCT014HU65G3AG
- STMicroelectronics
-
600:
Rp259.596
-
Non-Stocked Lead-Time 18 Weeks
-
New Product
|
Mouser Part No
511-SCT014HU65G3AG
New Product
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 13.5 mOhm typ., 110 A
|
|
Non-Stocked Lead-Time 18 Weeks
|
|
Min.: 600
Mult.: 600
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
SiC MOSFETs Silicon carbide Power MOSFET 650 V, 13.5 mOhm typ., 110 A in a TO-LL package
- SCT014TO65G3
- STMicroelectronics
-
1.800:
Rp201.439
-
Non-Stocked Lead-Time 19 Weeks
-
New Product
|
Mouser Part No
511-SCT014TO65G3
New Product
|
STMicroelectronics
|
SiC MOSFETs Silicon carbide Power MOSFET 650 V, 13.5 mOhm typ., 110 A in a TO-LL package
|
|
Non-Stocked Lead-Time 19 Weeks
|
|
Min.: 1.800
Mult.: 1.800
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
SiC MOSFETs Silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an H2PAK-7 package
- SCT018H65G3-7
- STMicroelectronics
-
1.000:
Rp180.708
-
Non-Stocked Lead-Time 16 Weeks
-
New Product
|
Mouser Part No
511-SCT018H65G3-7
New Product
|
STMicroelectronics
|
SiC MOSFETs Silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an H2PAK-7 package
|
|
Non-Stocked Lead-Time 16 Weeks
|
|
Min.: 1.000
Mult.: 1.000
|
|
|
SMD/SMT
|
H2PAK-7
|
N-Channel
|
1 Channel
|
650 V
|
55 A
|
27 mOhms
|
-10 V, 22 V
|
4.2 V
|
79.4 nC
|
- 55 C
|
+ 175 C
|
385 W
|
Enhancement
|
|
|
Indonesia