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STMicroelectronics SiC MOSFETs

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Results: 59

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Part #

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 8.5 mOhm typ., 239 A in a STPAK high creepage package

SCTHC250N120G3AG
STMicroelectronics
1: Rp1.408.789
32In Stock
New Product

Mfr. Part No.
SCTHC250N120G3AG

Mouser Part No
511-SCTHC250N120G3AG

New Product

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 8.5 mOhm typ., 239 A in a STPAK high creepage package

Datasheet

32In Stock

Rp1.408.789

Rp1.116.721

Rp952.891

Min.: 1
Mult.: 1

Through Hole

STPAK-4

1 Channel

1.2 kV

239 A

8.5 mOhms

- 10 V, + 22 V

4.4 V

304 nC

- 55 C

+ 200 C

994 W

AEC-Q100

SiC MOSFETs Silicon carbide Power MOSFET 650 V, 55 mOhm typ., 40 A in a PowerFLAT 8x8 HV pac

SCTL35N65G2V
STMicroelectronics
1: Rp333.897
2.309In Stock

Mfr. Part No.
SCTL35N65G2V

Mouser Part No
511-SCTL35N65G2V

STMicroelectronics

SiC MOSFETs Silicon carbide Power MOSFET 650 V, 55 mOhm typ., 40 A in a PowerFLAT 8x8 HV pac

Learn More

Datasheet

2.309In Stock

Cut Tape

Rp333.897

Rp237.030

Rp206.209

Rp175.021

Reel

Rp168.416

MouseReel Available

Min.: 1
Mult.: 1

: 3.000

SMD/SMT

PowerFLAT-5

1 Channel

650 V

40 A

67 mOhms

- 10 V, + 22 V

5 V

73 nC

- 55 C

+ 175 C

417 W

Enhancement

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 19.2 mOhm typ., 90 A

SCT019HU120G3AG
STMicroelectronics
1: Rp405.814
7In Stock
600Expected 05/02/2027
New Product

Mfr. Part No.
SCT019HU120G3AG

Mouser Part No
511-SCT019HU120G3AG

New Product

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 19.2 mOhm typ., 90 A

Learn More

Datasheet

7In Stock

600Expected 05/02/2027

Cut Tape

Rp405.814

Rp290.784

Rp255.927

Reel

Rp235.012

Min.: 1
Mult.: 1

: 600

AEC-Q100

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an HiP247-4 package

SCT012W90G3-4AG
STMicroelectronics
1: Rp407.281
630In Stock

Mfr. Part No.
SCT012W90G3-4AG

Mouser Part No
511-SCT012W90G3-4AG

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an HiP247-4 package

Learn More

Datasheet

630In Stock

Rp407.281

Rp251.707

Min.: 1
Mult.: 1

Through Hole

HiP247-3

1 Channel

900 V

110 A

15.8 mOhms

- 10 V, + 22 V

3.1 V

138 nC

- 55 C

+ 200 C

625 W

Enhancement

AEC-Q101

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 15 mOhm typ., 129 A in an HiP247-4 package

SCT015W120G3-4AG
STMicroelectronics
1: Rp472.776
540In Stock

Mfr. Part No.
SCT015W120G3-4AG

Mouser Part No
511-SCT015W120G3-4AG

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 15 mOhm typ., 129 A in an HiP247-4 package

Learn More

Datasheet

540In Stock

Rp472.776

Rp304.360

Min.: 1
Mult.: 1

Through Hole

HiP-247-4

1 Channel

1.2 kV

129 A

15 mOhms

- 18 V, + 18 V

4.2 V

167 nC

- 55 C

+ 200 C

673 W

Enhancement

AEC-Q101

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an HiP247-4 package

SCT018W65G3-4AG
STMicroelectronics
1: Rp342.703
448In Stock

Mfr. Part No.
SCT018W65G3-4AG

Mouser Part No
511-SCT018W65G3-4AG

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an HiP247-4 package

Datasheet

448In Stock

Rp342.703

Rp222.720

Rp207.310

Rp183.643

Min.: 1
Mult.: 1

Through Hole

HiP-247-4

1 Channel

650 V

55 A

27 mOhms

- 18 V, + 18 V

4.2 V

77 nC

- 55 C

+ 200 C

398 W

Enhancement

AEC-Q101

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HiP247-4 package

SCT020W120G3-4AG
STMicroelectronics
1: Rp371.140
256In Stock
600On Order

Mfr. Part No.
SCT020W120G3-4AG

Mouser Part No
511-SCT020W120G3-4AG

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HiP247-4 package

Learn More

Datasheet

256In Stock

600On Order

Rp371.140

Rp223.454

Min.: 1
Mult.: 1

Through Hole

Hip247-4

1 Channel

1.2 kV

100 A

28 mOhms

- 10 V, + 22 V

3 V

121 nC

- 55 C

+ 200 C

541 W

Enhancement

AEC-Q101

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247 package

SCT025W120G3AG
STMicroelectronics
1: Rp347.657
250In Stock
600Expected 12/03/2027

Mfr. Part No.
SCT025W120G3AG

Mouser Part No
511-SCT025W120G3AG

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247 package

Learn More

Datasheet

250In Stock

600Expected 12/03/2027

Rp347.657

Rp216.299

Rp202.907

Min.: 1
Mult.: 1

Through Hole

HiP247-3

1 Channel

1.2 kV

56 A

37 mOhms

- 10 V, + 22 V

3 V

73 nC

- 55 C

+ 200 C

388 W

Enhancement

AEC-Q101

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A in an H2PAK-7 package

SCT027H65G3AG
STMicroelectronics
1: Rp249.689
599In Stock
1.000On Order

Mfr. Part No.
SCT027H65G3AG

Mouser Part No
511-SCT027H65G3AG

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A in an H2PAK-7 package

Learn More

Datasheet

599In Stock

1.000On Order

Cut Tape

Rp249.689

Rp141.998

Rp141.631

Reel

Rp133.926

Min.: 1
Mult.: 1

: 1.000

SMD/SMT

H2PAK-7

1 Channel

650 V

60 A

39.3 mOhms

- 10 V, + 22 V

3 V

48.6 nC

- 55 C

+ 175 C

300 W

Enhancement

AEC-Q101

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A

SCT027W65G3-4AG
STMicroelectronics
1: Rp259.412
246In Stock

Mfr. Part No.
SCT027W65G3-4AG

Mouser Part No
511-SCT027W65G3-4AG

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A

Learn More

Datasheet

246In Stock

Rp259.412

Rp173.737

Rp161.078

Rp137.045

Min.: 1
Mult.: 1

Through Hole

HiP-247-4

1 Channel

650 V

60 A

29 mOhms

- 18 V, + 18 V

4.2 V

51 nC

- 55 C

+ 200 C

313 W

Enhancement

AEC-Q100

SiC MOSFETs Silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package

SCT040W65G3-4
STMicroelectronics
1: Rp213.364
487In Stock

Mfr. Part No.
SCT040W65G3-4

Mouser Part No
511-SCT040W65G3-4

STMicroelectronics

SiC MOSFETs Silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package

Learn More

Datasheet

487In Stock

Rp213.364

Rp116.864

Rp108.975

Min.: 1
Mult.: 1

Through Hole

HiP247-4

1 Channel

650 V

30 A

63 mOhms

- 10 V, + 22 V

3 V

37.5 nC

- 55 C

+ 200 C

240 W

Enhancement

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package

SCT040W65G3-4AG
STMicroelectronics
1: Rp246.203
481In Stock

Mfr. Part No.
SCT040W65G3-4AG

Mouser Part No
511-SCT040W65G3-4AG

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A in an HiP247-4 package

Learn More

Datasheet

481In Stock

Rp246.203

Rp164.380

Rp152.639

Rp131.541

Min.: 1
Mult.: 1

Through Hole

HiP247-4

1 Channel

650 V

30 A

63 mOhms

- 10 V, + 22 V

3 V

37.5 nC

- 55 C

+ 200 C

240 W

Enhancement

AEC-Q101

SiC MOSFETs Silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A in a TO-LL package

SCT055TO65G3
STMicroelectronics
1: Rp167.866
1.404In Stock

Mfr. Part No.
SCT055TO65G3

Mouser Part No
511-SCT055TO65G3

STMicroelectronics

SiC MOSFETs Silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A in a TO-LL package

Learn More

Datasheet

1.404In Stock

Cut Tape

Rp167.866

Rp91.913

Rp86.043

Rp79.622

Reel

Rp79.622

Min.: 1
Mult.: 1

: 1.800

SMD/SMT

TOLL-8

1 Channel

650 V

30 A

72 mOhms

- 10 V, + 22 V

3 V

31 nC

- 55 C

+ 175 C

234 W

Enhancement

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an H2PAK-7 package

SCT018H65G3AG
STMicroelectronics
1: Rp303.993
22In Stock
1.000Expected 29/01/2027

Mfr. Part No.
SCT018H65G3AG

Mouser Part No
511-SCT018H65G3AG

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an H2PAK-7 package

Learn More

Datasheet

22In Stock

1.000Expected 29/01/2027

Cut Tape

Rp303.993

Rp214.465

Rp182.726

Reel

Rp170.618

MouseReel Available

Min.: 1
Mult.: 1

: 1.000

SMD/SMT

H2PAK-7

1 Channel

650 V

55 A

27 mOhms

- 18 V, + 18 V

4.2 V

79.4 nC

- 55 C

+ 175 C

385 W

Enhancement

AEC-Q101

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247-4 package

SCT025W120G3-4AG
STMicroelectronics
1: Rp387.101
13In Stock
1.200On Order

Mfr. Part No.
SCT025W120G3-4AG

Mouser Part No
511-SCT025W120G3-4AG

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247-4 package

Learn More

Datasheet

13In Stock

1.200On Order

Rp387.101

Rp267.118

Rp243.818

Rp224.188

Min.: 1
Mult.: 1

Through Hole

HiP-247-4

1 Channel

1.2 kV

56 A

37 mOhms

- 18 V, + 18 V

4.2 V

73 nC

- 55 C

+ 200 C

388 W

Enhancement

AEC-Q101

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A

SCT040W120G3-4AG
STMicroelectronics
1: Rp258.128
112In Stock
600Expected 07/09/2026

Mfr. Part No.
SCT040W120G3-4AG

Mouser Part No
511-SCT040W120G3-4AG

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A

Learn More

Datasheet

112In Stock

600Expected 07/09/2026

Rp258.128

Rp190.798

Rp156.308

Min.: 1
Mult.: 1

Through Hole

HiP-247-4

1 Channel

1.2 kV

40 A

54 mOhms

- 18 V, + 18 V

4.2 V

56 nC

- 55 C

+ 200 C

312 W

Enhancement

AEC-Q100

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247 package

SCT040W120G3AG
STMicroelectronics
1: Rp254.826
36In Stock
600Expected 07/05/2027

Mfr. Part No.
SCT040W120G3AG

Mouser Part No
511-SCT040W120G3AG

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247 package

Learn More

Datasheet

36In Stock

600Expected 07/05/2027

Rp254.826

Rp179.057

Rp136.678

Min.: 1
Mult.: 1

Through Hole

HiP-247-3

1 Channel

1.2 kV

40 A

54 mOhms

- 18 V, + 18 V

4.2 V

56 nC

- 55 C

+ 200 C

312 W

Enhancement

AEC-Q101

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HiP247-4 package

SCT070W120G3-4AG
STMicroelectronics
1: Rp276.841
35In Stock
1.200Expected 29/01/2027

Mfr. Part No.
SCT070W120G3-4AG

Mouser Part No
511-SCT070W120G3-4AG

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HiP247-4 package

Learn More

Datasheet

35In Stock

1.200Expected 29/01/2027

Rp276.841

Rp207.677

Rp131.174

Min.: 1
Mult.: 1

Through Hole

HiP-247-4

1 Channel

1.2 kV

30 A

87 mOhms

- 18 V, + 18 V

4.2 V

41 nC

- 55 C

+ 200 C

236 W

Enhancement

AEC-Q101

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V 40 mOhm typ. 30 A

SCT040H65G3AG
STMicroelectronics
1: Rp222.170
730In Stock

Mfr. Part No.
SCT040H65G3AG

Mouser Part No
511-SCT040H65G3AG

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V 40 mOhm typ. 30 A

Learn More

Datasheet

730In Stock

Cut Tape

Rp222.170

Rp124.936

Rp121.634

Reel

Rp115.029

MouseReel Available

Min.: 1
Mult.: 1

: 1.000

SMD/SMT

1 Channel

650 V

30 A

40 mOhms

- 10 V, + 22 V

4.2 V

39.5 nC

- 55 C

+ 175 C

221 W

Enhancement

AEC-Q101

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 169 mOhm typ., 20 A in an

SCT20N120AG
STMicroelectronics
1: Rp313.900
334In Stock

Mfr. Part No.
SCT20N120AG

Mouser Part No
511-SCT20N120AG

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 169 mOhm typ., 20 A in an

Learn More

Datasheet

334In Stock

Rp313.900

Rp222.537

Rp165.664

Rp148.603

Quote

Min.: 1
Mult.: 1

Through Hole

1 Channel

1.2 kV

20 A

239 mOhms

- 20 V, + 20 V

3.5 V

45 nC

- 55 C

+ 200 C

175 W

Enhancement

AEC-Q101

SiC MOSFETs Silicon carbide Power MOSFET 650 V, 18 mOhm typ., 40 A in a PowerFLAT 8x8 HV pac

SCTL90N65G2V
STMicroelectronics
1: Rp572.395
1.301In Stock

Mfr. Part No.
SCTL90N65G2V

Mouser Part No
511-SCTL90N65G2V

STMicroelectronics

SiC MOSFETs Silicon carbide Power MOSFET 650 V, 18 mOhm typ., 40 A in a PowerFLAT 8x8 HV pac

Learn More

Datasheet

1.301In Stock

Cut Tape

Rp572.395

Rp409.299

Rp409.116

Rp387.651

Reel

Rp387.651

MouseReel Available

Min.: 1
Mult.: 1

: 3.000

SMD/SMT

PowerFLAT-5

1 Channel

650 V

40 A

18 mOhms

- 10 V, + 22 V

5 V

157 nC

- 55 C

+ 175 C

935 W

Enhancement

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HU3PAK package

SCT020HU120G3AG
STMicroelectronics
1: Rp417.555
5In Stock
1.200On Order
New Product

Mfr. Part No.
SCT020HU120G3AG

Mouser Part No
511-SCT020HU120G3AG

New Product

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HU3PAK package

Learn More

Datasheet

5In Stock

1.200On Order

Cut Tape

Rp417.555

Rp311.882

Rp263.265

Reel

Rp238.498

MouseReel Available

Min.: 1
Mult.: 1

: 600

SMD/SMT

HU3PAK-7

1 Channel

1.2 kV

100 A

28 mOhms

- 10 V, + 22 V

3 V

121 nC

- 55 C

555 W

Enhancement

AEC-Q101

SiC MOSFETs Silicon carbide Power MOSFET 650 V, 40 mOhm typ., 35 A in a TO-LL package

SCT040TO65G3
STMicroelectronics
1: Rp188.047
14In Stock
1.800Expected 29/01/2027

Mfr. Part No.
SCT040TO65G3

Mouser Part No
511-SCT040TO65G3

STMicroelectronics

SiC MOSFETs Silicon carbide Power MOSFET 650 V, 40 mOhm typ., 35 A in a TO-LL package

Learn More

Datasheet

14In Stock

1.800Expected 29/01/2027

Cut Tape

Rp188.047

Rp132.458

Rp98.335

Rp91.730

Reel

Rp91.730

Min.: 1
Mult.: 1

: 1.800

SMD/SMT

TOLL-8

1 Channel

650 V

35 A

63 mOhms

- 10 V, + 22 V

3 V

42.5 nC

- 55 C

+ 175 C

288 W

Enhancement

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A

SCT055W65G3-4AG
STMicroelectronics
1: Rp275.740
5In Stock
600Expected 16/04/2027

Mfr. Part No.
SCT055W65G3-4AG

Mouser Part No
511-SCT055W65G3-4AG

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A

Learn More

Datasheet

5In Stock

600Expected 16/04/2027

Rp275.740

Rp210.062

Rp188.047

Rp152.455

Min.: 1
Mult.: 1

Through Hole

HiP-247-4

1 Channel

650 V

30 A

72 mOhms

- 18 V, + 18 V

4.2 V

32 nC

- 55 C

+ 200 C

210 W

Enhancement

AEC-Q100

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an H2PAK-7 package

SCT070H120G3AG
STMicroelectronics
1: Rp248.221
14In Stock

Mfr. Part No.
SCT070H120G3AG

Mouser Part No
511-SCT070H120G3AG

STMicroelectronics

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an H2PAK-7 package

Learn More

Datasheet

14In Stock

Cut Tape

Rp248.221

Rp144.200

Rp134.476

Reel

Rp127.321

Min.: 1
Mult.: 1

: 1.000

SMD/SMT

H2PAK-7

1 Channel

1.2 kV

30 A

87 mOhms

- 18 V, + 18 V

4.2 V

37 nC

- 55 C

+ 175 C

223 W

Enhancement

AEC-Q101

STMicroelectronics SiC MOSFETs

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8.5 mOhms
10.5 mOhms
12 mOhms
15 mOhms
15.8 mOhms
18 mOhms
22 mOhms
26 mOhms
27 mOhms
28 mOhms
29 mOhms
37 mOhms
39.3 mOhms
40 mOhms
54 mOhms
63 mOhms
67 mOhms
72 mOhms
87 mOhms
100 mOhms

14 nC
22 nC
29 nC
31 nC
32 nC
36 nC
37 nC
37.5 nC
39.5 nC
41 nC
42.5 nC
45 nC
48.6 nC
51 nC
54 nC
56 nC
61 nC
73 nC
76 nC
77 nC

120 W
150 W
175 W
185 W
210 W
221 W
223 W
234 W
236 W
240 W
266 W
278 W
288 W
300 W
312 W
313 W
375 W
385 W
388 W
398 W