|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A
- SCT018W65G3AG
- STMicroelectronics
-
600:
Rp193.183
-
Non-Stocked Lead-Time 17 Weeks
-
New Product
|
Mouser Part No
511-SCT018W65G3AG
New Product
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A
|
|
Non-Stocked Lead-Time 17 Weeks
|
|
Min.: 600
Mult.: 600
|
|
|
Through Hole
|
HiP247-3
|
N-Channel
|
1 Channel
|
650 V
|
55 A
|
27 mOhms
|
-10 V, 22 V
|
4.2 V
|
76 nC
|
- 55 C
|
+ 200 C
|
398 W
|
Enhancement
|
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 19.2 mOhm typ., 90 A in a HiP247-4 package
- SCT019W120G3-4AG
- STMicroelectronics
-
1:
Rp340.318
-
Non-Stocked Lead-Time 17 Weeks
-
New Product
|
Mouser Part No
511-SCT019W120G3-4AG
New Product
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 19.2 mOhm typ., 90 A in a HiP247-4 package
|
|
Non-Stocked Lead-Time 17 Weeks
|
|
|
Rp340.318
|
|
|
Rp272.438
|
|
|
Rp235.563
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
HiP247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
90 A
|
26 mOhms
|
- 10 V, + 22 V
|
4.2 V
|
120 nC
|
- 55 C
|
+ 200 C
|
486 W
|
|
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A
- SCT020H120G3AG
- STMicroelectronics
-
1:
Rp338.117
-
Non-Stocked Lead-Time 16 Weeks
-
New Product
|
Mouser Part No
511-SCT020H120G3AG
New Product
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A
|
|
Non-Stocked Lead-Time 16 Weeks
|
|
|
Rp338.117
|
|
|
Rp270.787
|
|
|
Rp234.095
|
|
|
Rp234.095
|
|
Min.: 1
Mult.: 1
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247-4 package
- SCT025W120G3-4
- STMicroelectronics
-
600:
Rp215.199
-
Non-Stocked Lead-Time 17 Weeks
-
New Product
|
Mouser Part No
511-SCT025W120G3-4
New Product
|
STMicroelectronics
|
SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247-4 package
|
|
Non-Stocked Lead-Time 17 Weeks
|
|
Min.: 600
Mult.: 600
|
|
|
Through Hole
|
HiP247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
56 A
|
37 mOhms
|
-10 V, 22 V
|
4.2 V
|
73 nC
|
- 55 C
|
+ 200 C
|
388 W
|
Enhancement
|
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A
- SCT027HU65G3AG
- STMicroelectronics
-
1:
Rp247.854
-
Non-Stocked Lead-Time 18 Weeks
-
New Product
|
Mouser Part No
511-SCT027HU65G3AG
New Product
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A
|
|
Non-Stocked Lead-Time 18 Weeks
|
|
|
Rp247.854
|
|
|
Rp184.928
|
|
|
Rp159.977
|
|
|
Rp151.538
|
|
|
Rp128.605
|
|
Min.: 1
Mult.: 1
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
SiC MOSFETs Silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A in a TO-LL package
- SCT027TO65G3
- STMicroelectronics
-
1:
Rp229.325
-
Non-Stocked Lead-Time 19 Weeks
-
New Product
|
Mouser Part No
511-SCT027TO65G3
New Product
|
STMicroelectronics
|
SiC MOSFETs Silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A in a TO-LL package
|
|
Non-Stocked Lead-Time 19 Weeks
|
|
|
Rp229.325
|
|
|
Rp171.352
|
|
|
Rp148.052
|
|
|
Rp140.163
|
|
|
Rp119.066
|
|
|
Rp119.066
|
|
Min.: 1
Mult.: 1
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247 package
- SCT040W120G3
- STMicroelectronics
-
600:
Rp237.214
-
Non-Stocked
-
New Product
|
Mouser Part No
511-SCT040W120G3
New Product
|
STMicroelectronics
|
SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247 package
|
|
Non-Stocked
|
|
Min.: 600
Mult.: 600
|
|
|
Through Hole
|
HiP247-3
|
N-Channel
|
1 Channel
|
1.2 kV
|
40 A
|
54 mOhms
|
-10 V, 22 V
|
4.2 V
|
56 nC
|
- 55 C
|
+ 200 C
|
312 W
|
Enhancement
|
|
|
|
|
SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an H2PAK-7 package
- SCT070H120G3-7
- STMicroelectronics
-
1.000:
Rp92.831
-
Non-Stocked Lead-Time 16 Weeks
-
New Product
|
Mouser Part No
511-SCT070H120G3-7
New Product
|
STMicroelectronics
|
SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an H2PAK-7 package
|
|
Non-Stocked Lead-Time 16 Weeks
|
|
Min.: 1.000
Mult.: 1.000
|
|
|
SMD/SMT
|
H2PAK-7
|
N-Channel
|
1 Channel
|
1.2 kV
|
30 A
|
87 mOhms
|
- 10 V, + 22 V
|
3 V
|
37 nC
|
- 55 C
|
+ 175 C
|
223 W
|
Enhancement
|
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HiP247-4 package
- SCT070W120G3-4
- STMicroelectronics
-
1:
Rp200.522
-
Non-Stocked Lead-Time 17 Weeks
-
New Product
|
Mouser Part No
511-SCT070W120G3-4
New Product
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HiP247-4 package
|
|
Non-Stocked Lead-Time 17 Weeks
|
|
|
Rp200.522
|
|
|
Rp119.799
|
|
|
Rp102.004
|
|
|
Rp95.032
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
HiP247-4
|
N-Channel
|
|
1.2 kV
|
30 A
|
87 mOhms
|
- 10 V, + 22 V
|
3 V
|
41 nC
|
- 55 C
|
+ 200 C
|
236 W
|
Enhancement
|
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A
- SCT070W120G3AG
- STMicroelectronics
-
1:
Rp222.720
-
Non-Stocked Lead-Time 17 Weeks
-
New Product
|
Mouser Part No
511-SCT070W120G3AG
New Product
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A
|
|
Non-Stocked Lead-Time 17 Weeks
|
|
|
Rp222.720
|
|
|
Rp181.258
|
|
|
Rp151.171
|
|
|
Rp134.660
|
|
|
Rp114.296
|
|
Min.: 1
Mult.: 1
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 8.5 mOhm typ., 239 A in a STPAK high creepage package
- SCTHC250N120G3AG
- STMicroelectronics
-
1:
Rp1.383.655
-
Non-Stocked Lead-Time 19 Weeks
-
New Product
|
Mouser Part No
511-SCTHC250N120G3AG
New Product
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 8.5 mOhm typ., 239 A in a STPAK high creepage package
|
|
Non-Stocked Lead-Time 19 Weeks
|
|
|
Rp1.383.655
|
|
|
Rp1.151.028
|
|
|
Rp1.029.211
|
|
|
Quote
|
|
|
Quote
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
STPAK-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
239 A
|
10.5 nC
|
- 10 V, + 22 V
|
4.4 V
|
304 nC
|
- 55 C
|
+ 200 C
|
994 W
|
|
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 8.5 mOhm typ., 239 A
- SCTHCT250N12G3AG
- STMicroelectronics
-
448:
Rp1.029.211
-
Non-Stocked Lead-Time 19 Weeks
-
New Product
|
Mouser Part No
511-SCTHCT250N12G3AG
New Product
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 8.5 mOhm typ., 239 A
|
|
Non-Stocked Lead-Time 19 Weeks
|
|
Min.: 448
Mult.: 448
|
|
|
Through Hole
|
|
N-Channel
|
1 Channel
|
1.2 kV
|
239 A
|
10.5 mOhms
|
-10 V, 22 V
|
4.4 V
|
304 nC
|
- 55 C
|
+ 200 C
|
994 W
|
Enhancement
|
|
|
|
|
SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 62 mOhm typ., 36 A in an HiP247 package
- SCTWA40N120G2V
- STMicroelectronics
-
1:
Rp330.962
-
Non-Stocked Lead-Time 32 Weeks
-
NRND
|
Mouser Part No
511-SCTWA40N120G2V
NRND
|
STMicroelectronics
|
SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 62 mOhm typ., 36 A in an HiP247 package
|
|
Non-Stocked Lead-Time 32 Weeks
|
|
|
Rp330.962
|
|
|
Rp252.074
|
|
|
Rp211.896
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
HiP247-3
|
N-Channel
|
1 Channel
|
1.2 kV
|
36 A
|
100 mOhms
|
- 10 V, + 22 V
|
2.45 V
|
61 nC
|
- 55 C
|
+ 200 C
|
278 W
|
Enhancement
|
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A
STMicroelectronics SCT012HU90G3AG
- SCT012HU90G3AG
- STMicroelectronics
-
600:
Rp341.236
-
Non-Stocked
-
New Product
|
Mouser Part No
511-SCT012HU90G3AG
New Product
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A
|
|
Non-Stocked
|
|
Min.: 600
Mult.: 600
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 19.2 mOhm typ., 90 A in an
STMicroelectronics SCT019H120G3AG
- SCT019H120G3AG
- STMicroelectronics
-
1.000:
Rp222.904
-
Non-Stocked Lead-Time 16 Weeks
-
New Product
|
Mouser Part No
511-SCT019H120G3AG
New Product
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 19.2 mOhm typ., 90 A in an
|
|
Non-Stocked Lead-Time 16 Weeks
|
|
Min.: 1.000
Mult.: 1.000
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
SiC MOSFETs Silicon carbide Power MOSFET 650 V, 40 mOhm typ., 30 A in an H2PAK-7 package
STMicroelectronics SCT040H65G3-7
- SCT040H65G3-7
- STMicroelectronics
-
1.000:
Rp95.032
-
Non-Stocked Lead-Time 16 Weeks
-
New Product
|
Mouser Part No
511-SCT040H65G3-7
New Product
|
STMicroelectronics
|
SiC MOSFETs Silicon carbide Power MOSFET 650 V, 40 mOhm typ., 30 A in an H2PAK-7 package
|
|
Non-Stocked Lead-Time 16 Weeks
|
|
Min.: 1.000
Mult.: 1.000
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A
STMicroelectronics SCT040W65G3AG
- SCT040W65G3AG
- STMicroelectronics
-
600:
Rp122.001
-
Non-Stocked Lead-Time 17 Weeks
-
New Product
|
Mouser Part No
511-SCT040W65G3AG
New Product
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 45 mOhm typ., 30 A
|
|
Non-Stocked Lead-Time 17 Weeks
|
|
|
Rp122.001
|
|
|
Rp103.471
|
|
Min.: 600
Mult.: 600
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
SiC MOSFETs Silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A in an H2PAK-7 package
STMicroelectronics SCT055H65G3-7
- SCT055H65G3-7
- STMicroelectronics
-
1.000:
Rp87.510
-
Non-Stocked Lead-Time 16 Weeks
-
New Product
|
Mouser Part No
511-SCT055H65G3-7
New Product
|
STMicroelectronics
|
SiC MOSFETs Silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A in an H2PAK-7 package
|
|
Non-Stocked Lead-Time 16 Weeks
|
|
Min.: 1.000
Mult.: 1.000
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A
STMicroelectronics SCT055H65G3AG
- SCT055H65G3AG
- STMicroelectronics
-
1.000:
Rp95.216
-
Non-Stocked Lead-Time 16 Weeks
-
New Product
|
Mouser Part No
511-SCT055H65G3AG
New Product
|
STMicroelectronics
|
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A
|
|
Non-Stocked Lead-Time 16 Weeks
|
|
Min.: 1.000
Mult.: 1.000
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Indonesia