|
|
GaN FETs 650V, 30mohm GaN FET in TOLL
- TP65H030G4PQS-TR
- Renesas Electronics
-
1:
Rp181.075
-
351In Stock
-
New Product
|
Mouser Part No
227-TP65H030G4PQS-TR
New Product
|
Renesas Electronics
|
GaN FETs 650V, 30mohm GaN FET in TOLL
|
|
351In Stock
|
|
|
Rp181.075
|
|
|
Rp124.936
|
|
|
Rp83.291
|
|
|
Rp83.107
|
|
Min.: 1
Mult.: 1
|
|
|
SMD/SMT
|
TOLL-10
|
N-Channel
|
1 Channel
|
650 V
|
55.7 A
|
41 mOhms
|
|
4.8 V
|
24.5 nC
|
- 55C
|
+ 150 C
|
192 W
|
Enhancement
|
SuperGaN
|
|
|
|
GaN FETs 650V, 30mohm GaN FET in TO247-3L
- TP65H030G4PWS
- Renesas Electronics
-
1:
Rp183.827
-
798In Stock
-
New Product
|
Mouser Part No
227-TP65H030G4PWS
New Product
|
Renesas Electronics
|
GaN FETs 650V, 30mohm GaN FET in TO247-3L
|
|
798In Stock
|
|
|
Rp183.827
|
|
|
Rp128.605
|
|
|
Rp87.510
|
|
|
Rp86.226
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
650 V
|
55.7 A
|
41 mOhms
|
- 20 V, + 20 V
|
4.8 V
|
24.5 nC
|
- 55 C
|
+ 150 C
|
192 W
|
Enhancement
|
SuperGaN
|
|
|
|
GaN FETs 650V, 30mohm GaN FET in TOLT
- TP65H030G4PRS-TR
- Renesas Electronics
-
1:
Rp182.543
-
116In Stock
-
1.300Expected 17/02/2026
-
New Product
|
Mouser Part No
227-TP65H030G4PRS-TR
New Product
|
Renesas Electronics
|
GaN FETs 650V, 30mohm GaN FET in TOLT
|
|
116In Stock
1.300Expected 17/02/2026
|
|
|
Rp182.543
|
|
|
Rp125.854
|
|
|
Rp102.738
|
|
|
Rp83.841
|
|
Min.: 1
Mult.: 1
|
|
|
SMD/SMT
|
TOLT-16
|
N-Channel
|
1 Channel
|
650 V
|
55.7 A
|
41 mOhms
|
- 20 V, + 20 V
|
4.8 V
|
24.5 nC
|
- 55 C
|
+ 150 C
|
192 W
|
Enhancement
|
SuperGaN
|
|
|
|
GaN FETs 650V, 100mohm GaN FET in TO220
- TP65H100G4PS
- Renesas Electronics
-
1:
Rp113.562
-
850In Stock
-
New Product
|
Mouser Part No
227-TP65H100G4PS
New Product
|
Renesas Electronics
|
GaN FETs 650V, 100mohm GaN FET in TO220
|
|
850In Stock
|
|
|
Rp113.562
|
|
|
Rp76.319
|
|
|
Rp51.736
|
|
|
Rp44.581
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
TO-220-3
|
N-Channel
|
|
650 V
|
18.9 A
|
110 mOhms
|
- 20 V, + 20 V
|
3.65 V
|
14.4 nC
|
- 55 C
|
+ 150 C
|
65.8 W
|
Enhancement
|
SuperGaN
|
|
|
|
GaN FETs 650V, 50mohm GaN FET in TO247-4L
- TP65H050G4YS
- Renesas Electronics
-
1:
Rp179.240
-
611In Stock
|
Mouser Part No
227-TP65H050G4YS
|
Renesas Electronics
|
GaN FETs 650V, 50mohm GaN FET in TO247-4L
|
|
611In Stock
|
|
|
Rp179.240
|
|
|
Rp123.285
|
|
|
Rp82.007
|
|
|
Rp81.823
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
650 V
|
35 A
|
60 mOhms
|
- 20 V, + 20 V
|
4.8 V
|
16 nC
|
- 55 C
|
+ 150 C
|
132 W
|
Enhancement
|
SuperGaN
|
|
|
|
GaN FETs 650V, 70mohm GaN FET in 8x8 PQFN
- TP65H070G4LSG-TR
- Renesas Electronics
-
1:
Rp145.851
-
2.674In Stock
|
Mouser Part No
227-TP65H070G4LSG-TR
|
Renesas Electronics
|
GaN FETs 650V, 70mohm GaN FET in 8x8 PQFN
|
|
2.674In Stock
|
|
|
Rp145.851
|
|
|
Rp99.252
|
|
|
Rp76.503
|
|
|
Rp62.376
|
|
Min.: 1
Mult.: 1
|
|
|
SMD/SMT
|
PQFN-3
|
N-Channel
|
1 Channel
|
650 V
|
29 A
|
85 mOhms
|
- 20 V, + 20 V
|
4.8 V
|
8.4 nC
|
- 55 C
|
+ 150 C
|
96 W
|
Enhancement
|
SuperGaN
|
|
|
|
GaN FETs 650V, 70mohm GaN FET in 8x8 PQFN
- TP65H070G4LSGB-TR
- Renesas Electronics
-
1:
Rp143.466
-
2.518In Stock
|
Mouser Part No
227-TP65H070G4LSGBTR
|
Renesas Electronics
|
GaN FETs 650V, 70mohm GaN FET in 8x8 PQFN
|
|
2.518In Stock
|
|
|
Rp143.466
|
|
|
Rp97.417
|
|
|
Rp74.668
|
|
|
Rp60.909
|
|
Min.: 1
Mult.: 1
|
|
|
SMD/SMT
|
PQFN-8
|
N-Channel
|
1 Channel
|
650 V
|
29 A
|
85 mOhms
|
- 20 V, + 20 V
|
4.6 V
|
8.4 nC
|
- 55 C
|
+ 150 C
|
96 W
|
Enhancement
|
SuperGaN
|
|
|
|
GaN FETs 650V, 70mohm GaN FET in TO220
- TP65H070G4PS
- Renesas Electronics
-
1:
Rp137.778
-
1.226In Stock
|
Mouser Part No
227-TP65H070G4PS
|
Renesas Electronics
|
GaN FETs 650V, 70mohm GaN FET in TO220
|
|
1.226In Stock
|
|
|
Rp137.778
|
|
|
Rp74.301
|
|
|
Rp68.247
|
|
|
Rp57.790
|
|
|
Rp57.790
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
650 V
|
29 A
|
85 mOhms
|
- 20 V, + 20 V
|
4.7 V
|
9 nC
|
- 55 C
|
+ 150 C
|
96 W
|
Enhancement
|
SuperGaN
|
|
|
|
GaN FETs 650V, 70mohm GaN FET in TOLT
- TP65H070G4RS-TR
- Renesas Electronics
-
1:
Rp146.218
-
1.696In Stock
-
New At Mouser
|
Mouser Part No
227-TP65H070G4RS-TR
New At Mouser
|
Renesas Electronics
|
GaN FETs 650V, 70mohm GaN FET in TOLT
|
|
1.696In Stock
|
|
|
Rp146.218
|
|
|
Rp99.435
|
|
|
Rp76.686
|
|
|
Rp62.560
|
|
Min.: 1
Mult.: 1
|
|
|
SMD/SMT
|
TOLT-16
|
N-Channel
|
1 Channel
|
650 V
|
29 A
|
85 mOhms
|
- 20 V, + 20 V
|
4.8 V
|
9 nC
|
- 55 C
|
+ 150 C
|
96 W
|
Enhancement
|
SuperGaN
|
|
|
|
GaN FETs 650V, 480mohm GaN FET in 5x6 PQFN
- TP65H480G4JSGB-TR
- Renesas Electronics
-
1:
Rp37.242
-
3.773In Stock
|
Mouser Part No
227-TP65H480G4JSGBTR
|
Renesas Electronics
|
GaN FETs 650V, 480mohm GaN FET in 5x6 PQFN
|
|
3.773In Stock
|
|
|
Rp37.242
|
|
|
Rp23.850
|
|
|
Rp16.126
|
|
|
Rp12.806
|
|
|
Rp12.090
|
|
|
Rp9.852
|
|
Min.: 1
Mult.: 1
|
|
|
SMD/SMT
|
QFN-7
|
N-Channel
|
1 Channel
|
650 V
|
3.6 A
|
560 mOhms
|
- 10 V, + 10 V
|
2.8 V
|
5 nC
|
- 55 C
|
+ 150 C
|
13.2 W
|
Enhancement
|
SuperGaN
|
|
|
|
GaN FETs GAN FET 650V 95A TO2 47
- TP65H015G5WS
- Renesas Electronics
-
1:
Rp404.896
-
409In Stock
|
Mouser Part No
227-TP65H015G5WS
|
Renesas Electronics
|
GaN FETs GAN FET 650V 95A TO2 47
|
|
409In Stock
|
|
|
Rp404.896
|
|
|
Rp394.072
|
|
|
Rp370.039
|
|
|
Rp235.196
|
|
|
Rp235.012
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
650 V
|
95 A
|
18 mOhms
|
- 20 V, + 20 V
|
4 V
|
68 nC
|
- 55 C
|
+ 150 C
|
276 W
|
Enhancement
|
|
|
|
|
GaN FETs 650V, 50mohm GaN FET in TO247-3L
- TP65H050G4WS
- Renesas Electronics
-
1:
Rp194.284
-
768In Stock
|
Mouser Part No
227-TP65H050G4WS
|
Renesas Electronics
|
GaN FETs 650V, 50mohm GaN FET in TO247-3L
|
|
768In Stock
|
|
|
Rp194.284
|
|
|
Rp116.314
|
|
|
Rp98.885
|
|
|
Rp91.730
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
650 V
|
34 A
|
60 mOhms
|
- 20 V, + 20 V
|
4.8 V
|
24 nC
|
- 55 C
|
+ 150 C
|
119 W
|
Enhancement
|
|
|
|
|
GaN FETs 650V, 150mohm GaN FET in TO220
- TP65H150G4PS
- Renesas Electronics
-
1:
Rp84.025
-
856In Stock
|
Mouser Part No
227-TP65H150G4PS
|
Renesas Electronics
|
GaN FETs 650V, 150mohm GaN FET in TO220
|
|
856In Stock
|
|
|
Rp84.025
|
|
|
Rp43.297
|
|
|
Rp39.444
|
|
|
Rp33.206
|
|
|
View
|
|
|
Rp30.087
|
|
|
Rp29.721
|
|
Min.: 1
Mult.: 1
|
|
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
650 V
|
13 A
|
180 mOhms
|
- 20 V, + 20 V
|
4.8 V
|
8 nC
|
- 55 C
|
+ 150 C
|
52 W
|
Enhancement
|
SuperGaN
|
|
|
|
GaN FETs 650V, 480mohm GaN FET in 5x6 PQFN
- TP65H480G4JSG-TR
- Renesas Electronics
-
1:
Rp37.242
-
1.685In Stock
|
Mouser Part No
227-TP65H480G4JSG-TR
|
Renesas Electronics
|
GaN FETs 650V, 480mohm GaN FET in 5x6 PQFN
|
|
1.685In Stock
|
|
|
Rp37.242
|
|
|
Rp23.850
|
|
|
Rp16.126
|
|
|
Rp15.741
|
|
|
Rp10.090
|
|
|
View
|
|
|
Rp14.897
|
|
|
Rp12.072
|
|
|
Rp9.852
|
|
Min.: 1
Mult.: 1
|
|
|
SMD/SMT
|
PQFN-3
|
N-Channel
|
1 Channel
|
650 V
|
3.6 A
|
560 mOhms
|
- 18 V, + 18 V
|
2.8 V
|
9 nC
|
- 55 C
|
+ 150 C
|
13.2 W
|
Enhancement
|
SuperGaN
|
|
|
|
GaN FETs 650V, 35mohm GaN FET in TO247-4L
- TP65H035G4YS
- Renesas Electronics
-
1.200:
Rp97.417
-
Non-Stocked Lead-Time 26 Weeks
-
New Product
|
Mouser Part No
227-TP65H035G4YS
New Product
|
Renesas Electronics
|
GaN FETs 650V, 35mohm GaN FET in TO247-4L
|
|
Non-Stocked Lead-Time 26 Weeks
|
|
Min.: 1.200
Mult.: 1.200
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
650 V
|
46.5 A
|
41 mOhms
|
- 20 V, + 20 V
|
3.6 V
|
42.7 nC
|
- 55 C
|
+ 150 C
|
156 W
|
Enhancement
|
SuperGaN
|
|
|
|
GaN FETs 650V, 50mohm GaN FET in TOLL
- TP65H050G4QS-TR
- Renesas Electronics
-
2.000:
Rp77.420
-
Non-Stocked Lead-Time 16 Weeks
|
Mouser Part No
227-TP65H050G4QS-TR
|
Renesas Electronics
|
GaN FETs 650V, 50mohm GaN FET in TOLL
|
|
Non-Stocked Lead-Time 16 Weeks
|
|
Min.: 2.000
Mult.: 2.000
|
|
|
SMD/SMT
|
TOLL-8
|
N-Channel
|
1 Channel
|
650 V
|
34 A
|
60 mOhms
|
- 20 V, + 20 V
|
4.8 V
|
16 nC
|
- 55 C
|
+ 150 C
|
119 W
|
Enhancement
|
SuperGaN
|
|
|
|
GaN FETs 650V, 70mohm GaN FET in 8x8 PQFN
- TP65H070G4LSGBEA-TR
- Renesas Electronics
-
3.000:
Rp62.376
-
Non-Stocked Lead-Time 16 Weeks
-
New Product
|
Mouser Part No
227-TP65H070G4LSGBEA
New Product
|
Renesas Electronics
|
GaN FETs 650V, 70mohm GaN FET in 8x8 PQFN
|
|
Non-Stocked Lead-Time 16 Weeks
|
|
Min.: 3.000
Mult.: 3.000
|
|
|
|
PQFN-8
|
|
|
650 V
|
|
|
|
|
|
|
|
|
|
SuperGaN
|
|
|
|
GaN FETs 650V, 70mohm GaN FET in 8x8 PQFN
- TP65H070G4LSGEA-TR
- Renesas Electronics
-
3.000:
Rp59.074
-
Non-Stocked Lead-Time 16 Weeks
-
New Product
|
Mouser Part No
227-TP65H070G4LSGEAT
New Product
|
Renesas Electronics
|
GaN FETs 650V, 70mohm GaN FET in 8x8 PQFN
|
|
Non-Stocked Lead-Time 16 Weeks
|
|
Min.: 3.000
Mult.: 3.000
|
|
|
|
PQFN-8
|
|
|
650 V
|
|
|
|
|
|
|
|
|
|
SuperGaN
|
|
|
|
GaN FETs 650V, 70mohm GaN FET in TOLL
- TP65H070G4QS-TR
- Renesas Electronics
-
2.000:
Rp55.038
-
Non-Stocked Lead-Time 16 Weeks
|
Mouser Part No
227-TP65H070G4QS-TR
|
Renesas Electronics
|
GaN FETs 650V, 70mohm GaN FET in TOLL
|
|
Non-Stocked Lead-Time 16 Weeks
|
|
Min.: 2.000
Mult.: 2.000
|
|
|
SMD/SMT
|
TOLL-8
|
N-Channel
|
1 Channel
|
650 V
|
29 A
|
60 mOhms
|
- 20 V, + 20 V
|
4.8 V
|
8.4 nC
|
- 55 C
|
+ 150 C
|
96 W
|
Enhancement
|
SuperGaN
|
|
|
|
GaN FETs 650V, 100mohm GaN FET in 8x8 PQFN
- TP65H100G4LSGB-TR
- Renesas Electronics
-
3.000:
Rp37.976
-
Non-Stocked Lead-Time 14 Weeks
-
New Product
|
Mouser Part No
227-TP65H100G4LSGBTR
New Product
|
Renesas Electronics
|
GaN FETs 650V, 100mohm GaN FET in 8x8 PQFN
|
|
Non-Stocked Lead-Time 14 Weeks
|
|
Min.: 3.000
Mult.: 3.000
|
|
|
SMD/SMT
|
PQFN-8
|
N-Channel
|
1 Channel
|
650 V
|
18.9 A
|
110 mOhms
|
- 20 V, + 20 V
|
4.1 V
|
14.4 nC
|
- 55 C
|
+ 150 C
|
|
Enhancement
|
SuperGaN
|
|
|
|
GaN FETs 700V, 150mohm GaN FET in 8x8 PQFN
- TP70H150G4LSG-TR
- Renesas Electronics
-
3.000:
Rp215.932
-
Non-Stocked Lead-Time 14 Weeks
-
New Product
|
Mouser Part No
227-TP70H150G4LSG-TR
New Product
|
Renesas Electronics
|
GaN FETs 700V, 150mohm GaN FET in 8x8 PQFN
|
|
Non-Stocked Lead-Time 14 Weeks
|
|
Min.: 3.000
Mult.: 3.000
|
|
|
|
|
|
|
700 V
|
|
|
|
|
|
|
|
|
|
SuperGaN
|
|
|
|
GaN FETs 700V, 150mohm GaN FET in 8x8 PQFN
- TP70H150G4LSGB-TR
- Renesas Electronics
-
3.000:
Rp24.767
-
Non-Stocked Lead-Time 14 Weeks
|
Mouser Part No
227-TP70H150G4LSGBTR
|
Renesas Electronics
|
GaN FETs 700V, 150mohm GaN FET in 8x8 PQFN
|
|
Non-Stocked Lead-Time 14 Weeks
|
|
|
Rp24.767
|
|
|
Rp24.400
|
|
Min.: 3.000
Mult.: 3.000
|
|
|
|
|
|
|
700 V
|
|
|
|
|
|
|
|
|
|
SuperGaN
|
|
|
|
GaN FETs 700V, 300mohm GaN FET in 5x6 PQFN
- TP70H300G4JSGB-TR
- Renesas Electronics
-
5.000:
Rp69.898
-
Non-Stocked Lead-Time 14 Weeks
|
Mouser Part No
227-TP70H300G4JSGBTR
|
Renesas Electronics
|
GaN FETs 700V, 300mohm GaN FET in 5x6 PQFN
|
|
Non-Stocked Lead-Time 14 Weeks
|
|
Min.: 5.000
Mult.: 5.000
|
|
|
|
|
|
|
700 V
|
|
|
|
|
|
|
|
|
|
SuperGaN
|
|
|
|
GaN FETs 700V, 300mohm GaN FET in 8x8 PQFN
- TP70H300G4LSGB-TR
- Renesas Electronics
-
1:
Rp81.089
-
Non-Stocked Lead-Time 14 Weeks
-
New Product
|
Mouser Part No
227-TP70H300G4LSGBTR
New Product
|
Renesas Electronics
|
GaN FETs 700V, 300mohm GaN FET in 8x8 PQFN
|
|
Non-Stocked Lead-Time 14 Weeks
|
|
|
Rp81.089
|
|
|
Rp54.121
|
|
|
Rp41.645
|
|
|
Rp36.875
|
|
|
Rp31.555
|
|
|
Rp29.721
|
|
Min.: 1
Mult.: 1
|
|
|
|
|
|
|
700 V
|
|
|
|
|
|
|
|
|
|
SuperGaN
|
|
|
|
GaN FETs 700V, 480mohm GaN FET in 5x6 PQFN
- TP70H480G4JSG-TR
- Renesas Electronics
-
5.000:
Rp10.824
-
Non-Stocked Lead-Time 14 Weeks
|
Mouser Part No
227-TP70H480G4JSG-TR
|
Renesas Electronics
|
GaN FETs 700V, 480mohm GaN FET in 5x6 PQFN
|
|
Non-Stocked Lead-Time 14 Weeks
|
|
|
Rp10.824
|
|
|
Rp10.659
|
|
|
Quote
|
|
|
Quote
|
|
Min.: 5.000
Mult.: 5.000
|
|
|
|
|
|
|
700 V
|
|
|
|
|
|
|
|
|
|
SuperGaN
|
|
Indonesia